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Title: Applications of laser annealing and laser-induced diffusion to photovoltaic conversion

Abstract

Progress in the development of polycrystalline solar cells is hampered by the present poor state of knowledge about electronic and ionic processes at grain boundaries. A major difficulty in studying such processes is that conventional growth and thermal diffusion techniques used for doping semiconductors cause segregation of the dopant at grain boundaries and are unable to provide control of the fast diffusion which is known to occur along grain boundaries. The salient features of two new techniques for the study and control of grain boundary effects are reviewed. Neutron transmutation doping is a method for circumventing segregation problems in bulk polycrystalline silicon. With such doping, long-range diffusion does not occur in the material and hence the dopants cannot migrate to grain boundaries. Laser annealing and laser-induced diffusion are two other newly developed techniques which can be used to control grain boundary diffusion and segregation. With these techniques, the near-surface region of a sample actually melts but stays molten for such a short time (approx. 10/sup -7/ sec) that significant dopant migration cannot occur. These new doping methods do not necessarily insure better efficiencies of cells made from polycrystalline materials, but they provide a degree of control of dopants that hasmore » not been available before and hence make possible more definitive studies of grain boundary effects. Laser techniques can also be used to promote growth, and evidence from EBIC and TEM indicates that pulsed-laser annealing changes the elementary structure of some types of grain boundaries. Also, efforts to understand the role of lithium in polycrystalline Si are described. (WHK)« less

Authors:
; ;
Publication Date:
Research Org.:
Oak Ridge National Lab., TN (USA)
Sponsoring Org.:
USDOE Division of Materials Science
OSTI Identifier:
7088947
Report Number(s):
CONF-801153-1
DOE Contract Number:  
W-7405-ENG-26
Resource Type:
Conference
Resource Relation:
Conference: Topical polycrystalline silicon subcontractors' review meeting, Colorado Springs, CO, USA, 17 Nov 1980
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; SILICON SOLAR CELLS; CRYSTAL DOPING; GRAIN BOUNDARIES; LITHIUM ADDITIONS; ANNEALING; DIFFUSION; LASER-RADIATION HEATING; NEUTRON REACTIONS; POLYCRYSTALS; RESEARCH PROGRAMS; TRANSMUTATION; TRAPPING; ALLOYS; BARYON REACTIONS; CRYSTAL STRUCTURE; CRYSTALS; DIRECT ENERGY CONVERTERS; EQUIPMENT; HADRON REACTIONS; HEAT TREATMENTS; HEATING; LITHIUM ALLOYS; MICROSTRUCTURE; NUCLEAR REACTIONS; NUCLEON REACTIONS; PHOTOELECTRIC CELLS; PHOTOVOLTAIC CELLS; PLASMA HEATING; SOLAR CELLS; SOLAR EQUIPMENT; 140501* - Solar Energy Conversion- Photovoltaic Conversion

Citation Formats

Young, R. T., Lowndes, D. H., and Wood, R. F. Applications of laser annealing and laser-induced diffusion to photovoltaic conversion. United States: N. p., 1980. Web.
Young, R. T., Lowndes, D. H., & Wood, R. F. Applications of laser annealing and laser-induced diffusion to photovoltaic conversion. United States.
Young, R. T., Lowndes, D. H., and Wood, R. F. Tue . "Applications of laser annealing and laser-induced diffusion to photovoltaic conversion". United States. https://www.osti.gov/servlets/purl/7088947.
@article{osti_7088947,
title = {Applications of laser annealing and laser-induced diffusion to photovoltaic conversion},
author = {Young, R. T. and Lowndes, D. H. and Wood, R. F.},
abstractNote = {Progress in the development of polycrystalline solar cells is hampered by the present poor state of knowledge about electronic and ionic processes at grain boundaries. A major difficulty in studying such processes is that conventional growth and thermal diffusion techniques used for doping semiconductors cause segregation of the dopant at grain boundaries and are unable to provide control of the fast diffusion which is known to occur along grain boundaries. The salient features of two new techniques for the study and control of grain boundary effects are reviewed. Neutron transmutation doping is a method for circumventing segregation problems in bulk polycrystalline silicon. With such doping, long-range diffusion does not occur in the material and hence the dopants cannot migrate to grain boundaries. Laser annealing and laser-induced diffusion are two other newly developed techniques which can be used to control grain boundary diffusion and segregation. With these techniques, the near-surface region of a sample actually melts but stays molten for such a short time (approx. 10/sup -7/ sec) that significant dopant migration cannot occur. These new doping methods do not necessarily insure better efficiencies of cells made from polycrystalline materials, but they provide a degree of control of dopants that has not been available before and hence make possible more definitive studies of grain boundary effects. Laser techniques can also be used to promote growth, and evidence from EBIC and TEM indicates that pulsed-laser annealing changes the elementary structure of some types of grain boundaries. Also, efforts to understand the role of lithium in polycrystalline Si are described. (WHK)},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1980},
month = {1}
}

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