Laser processing of polycrystalline silicon solar cells
In the formation of p-n junctions in polycrystalline solar cells, any conventional high-temperature treatment will cause adverse effects either because of dopant diffusion along the grain boundaries which may cause shorting of the junction, or because of contamination by undesired impurities. Recently, we have demonstrated that ion implantation and pulsed-laser annealing can be used to produce well-controlled dopant regions in polycrystalline Si. Because of the short duration of the laser radiation and because the near-surface region of the samples melt, grain boundary diffusion and segregation can be eliminated. Solar cells fabricated from cast polycrystalline Si by this technique have resulted in open circuit voltages as high as 560 mv and efficiencies as high as 11.6%.
- Research Organization:
- Oak Ridge National Lab., TN (USA)
- DOE Contract Number:
- W-7405-ENG-26
- OSTI ID:
- 5579326
- Report Number(s):
- CONF-791112-55
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
ANNEALING
CRYSTAL STRUCTURE
CRYSTALS
DIFFUSION
DIRECT ENERGY CONVERTERS
EFFICIENCY
ELEMENTS
EQUIPMENT
FABRICATION
GRAIN BOUNDARIES
HEAT TREATMENTS
HEATING
ION IMPLANTATION
JUNCTIONS
LASER-RADIATION HEATING
MICROSTRUCTURE
P-N JUNCTIONS
PERFORMANCE
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
PLASMA HEATING
POLYCRYSTALS
QUANTUM EFFICIENCY
SEMICONDUCTOR JUNCTIONS
SEMIMETALS
SILICON
SILICON SOLAR CELLS
SOLAR CELLS
SOLAR EQUIPMENT