Organometallic vapor-phase epitaxial growth and characterization of the metastable alloy InP/sub 1-//sub x/Sb/sub x/
The III-V metastable alloy InP/sub 1-//sub x/ Sb/sub x/ has been grown for the first time with compositions well inside the miscibility gap. Despite the large miscibility gap at the growth temperatures of 480--600 /sup 0/C, epilayers with compositions covering the entire range from x = 0 to 1.0 have been grown successfully by organometallic vapor-phase epitaxy at atmospheric pressure using the reactants trimethylindium, trimethylantimony, and phosphine. The 10-K energy band gap as a function of composition was determined from photoluminescence measurements combined with x-ray diffraction and electron microprobe analysis. The bowing parameter for the band-gap energy of the InP/sub 1-//sub x/ Sb/sub x/ was estimated to be 1.9 +- 0.1 eV. The lattice dynamics have been studied using Raman spectroscopy in the frequency range from 150 to 400 cm/sup -1/. Long wavelength optical phonons display a ''two-mode'' behavior throughout the entire composition range. The InP-like longitudinal-optical and transverse-optical modes shift to lower frequency with increasing Sb concentration.
- Research Organization:
- Department of Materials Science and Engineering, University of Utah, Salt Lake City, Utah 84112
- OSTI ID:
- 7078149
- Journal Information:
- J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 64:3; ISSN JAPIA
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
360602* -- Other Materials-- Structure & Phase Studies
360603 -- Materials-- Properties
ANTIMONY COMPOUNDS
COHERENT SCATTERING
CRYSTAL GROWTH
CRYSTAL STRUCTURE
DIFFRACTION
ELECTRON SPECTROSCOPY
ELECTRONIC STRUCTURE
ENERGY LEVELS
EPITAXY
HIGH TEMPERATURE
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
LUMINESCENCE
MATERIALS
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PHOTOLUMINESCENCE
PNICTIDES
SCATTERING
SEMICONDUCTOR MATERIALS
SPECTROSCOPY
SUPERLATTICES
VAPOR PHASE EPITAXY
X-RAY DIFFRACTION