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Organometallic vapor-phase epitaxial growth and characterization of the metastable alloy InP/sub 1-//sub x/Sb/sub x/

Journal Article · · J. Appl. Phys.; (United States)
DOI:https://doi.org/10.1063/1.341820· OSTI ID:7078149

The III-V metastable alloy InP/sub 1-//sub x/ Sb/sub x/ has been grown for the first time with compositions well inside the miscibility gap. Despite the large miscibility gap at the growth temperatures of 480--600 /sup 0/C, epilayers with compositions covering the entire range from x = 0 to 1.0 have been grown successfully by organometallic vapor-phase epitaxy at atmospheric pressure using the reactants trimethylindium, trimethylantimony, and phosphine. The 10-K energy band gap as a function of composition was determined from photoluminescence measurements combined with x-ray diffraction and electron microprobe analysis. The bowing parameter for the band-gap energy of the InP/sub 1-//sub x/ Sb/sub x/ was estimated to be 1.9 +- 0.1 eV. The lattice dynamics have been studied using Raman spectroscopy in the frequency range from 150 to 400 cm/sup -1/. Long wavelength optical phonons display a ''two-mode'' behavior throughout the entire composition range. The InP-like longitudinal-optical and transverse-optical modes shift to lower frequency with increasing Sb concentration.

Research Organization:
Department of Materials Science and Engineering, University of Utah, Salt Lake City, Utah 84112
OSTI ID:
7078149
Journal Information:
J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 64:3; ISSN JAPIA
Country of Publication:
United States
Language:
English