Organometallic vapor phase epitaxial growth of a new semiconductor alloy: GaP/sub 1-//sub x/Sb/sub x/

Journal Article · Mon Feb 15 04:00:00 EST 1988 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.99413· OSTI ID:5530056

Jou, M J; Cherng, Y T; Jen, H R; Stringfellow, G B

The III/V semiconductor alloy GaP/sub 1-//sub x/Sb/sub x/ has been grown for the first time. This alloy, which has a large miscibility gap at the growth temperatures of 530--600 /sup 0/C, has been grown by organometallic vapor phase epitaxy at atmospheric pressure. In spite of the miscibility gap, which is calculated to extend from x = 0.01 to 0.99 at 530 /sup 0/C, layers with excellent surface morphologies could be grown throughout the entire composition range. The 10 K energy band gap has been determined as a function of composition by using photoluminescence, x-ray diffraction, and electron microprobe analysis, yielding bowing parameters of 3.8 and 2.7 eV for the GAMMA and X conduction band minima, respectively.

• Research Organization: Department of Materials Science and Engineering, University of Utah, Salt Lake City, Utah 84112
• OSTI ID: 5530056
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 52:7; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360601* -- Other Materials-- Preparation & Manufacture
360603 -- Materials-- Properties
ANTIMONY COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
COATINGS
ENERGY GAP
EPITAXY
GALLIUM ANTIMONIDES
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GALLIUM PHOSPHIDES
HIGH TEMPERATURE
LUMINESCENCE
ORGANIC COMPOUNDS
ORGANOMETALLIC COMPOUNDS
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PHOTOLUMINESCENCE
PNICTIDES
VAPOR DEPOSITED COATINGS
VAPOR PHASE EPITAXY
VERY HIGH TEMPERATURE