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Title: Raman scattering and x-ray diffractometry studies of epitaxial TiO[sub 2] and VO[sub 2] thin films and multilayers on [alpha]-Al[sub 2]O[sub 3](11[bar 2]0)

Journal Article · · Journal of Applied Physics; (United States)
DOI:https://doi.org/10.1063/1.353036· OSTI ID:7077499
; ; ; ; ; ; ;  [1]
  1. Materials Science Division, Argonne National Laboratory, 9700 S. Cass Avenue, Argonne, Illinois 60439 (United States)

Epitaxial thin films of TiO[sub 2] and VO[sub 2] single layers and TiO[sub 2]/VO[sub 2] multilayers were grown on (11[bar 2]0) sapphire ([alpha]-Al[sub 2]O[sub 3]) substrates using the metalorganic chemical vapor deposition technique and were characterized using Raman scattering and four-circle x-ray diffractometry. X-ray diffraction results indicate that the films are high quality single crystal material with well defined growth plane and small in-plane and out-of-plane mosaic. Single-layer films are shown to obey the Raman selection rules of TiO[sub 2] and VO[sub 2] single crystals. The close adherence to the Raman selection rules indicates the high degree of orientation of the films, both parallel and perpendicular to the growth plane. Selection rule spectra of two and three layer TiO[sub 2]/VO[sub 2] multilayers are dominated by the VO[sub 2] layers with only minimal signature of the TiO[sub 2] layers. Due to the low band gap of semiconducting vanadium dioxide, we attribute the strong signature of the VO[sub 2] layers to resonant enhancement of the VO[sub 2] Raman component accompanied with absorption of the both the incident and scattered laser light from the TiO[sub 2] layers.

DOE Contract Number:
W-31-109-ENG-38
OSTI ID:
7077499
Journal Information:
Journal of Applied Physics; (United States), Vol. 73:6; ISSN 0021-8979
Country of Publication:
United States
Language:
English