Process for forming one or more substantially pure layers in substrate material using ion implantation
Patent
·
OSTI ID:7073224
A process is disclosed for forming a substantially pure layer of an implantable element in a substrate material by (a) selecting an implantable element and a substrate material to be implanted which, at the temperatures to be used, have limited mutual solubility in one another and do not form any intermediate phases with one another; (b) implanting a sufficient amount of the implantable element in the substrate material to permit formation of the desired substantially pure layer of the implantable element in the substrate material; and (c) annealing the implanted substrate material to form the desired layer. The annealing step may not be required if the desired layer was formed during the implantation. 2 figs.
- DOE Contract Number:
- W-7405-ENG-48
- Assignee:
- Dept. of Energy, Washington, DC (United States)
- Patent Number(s):
- US 4976987; A
- Application Number:
- PPN: US 7-391904
- OSTI ID:
- 7073224
- Country of Publication:
- United States
- Language:
- English
Similar Records
Process for forming one or more substantially pure layers in substrate material using ion implantation
Process for forming one or more substantially pure layers in substrate material using ion implantation
Process for forming one or more substantially pure layers in substrate material using ion implantation
Patent
·
1989
·
OSTI ID:867638
Process for forming one or more substantially pure layers in substrate material using ion implantation
Patent
·
1991
·
OSTI ID:868358
Process for forming one or more substantially pure layers in substrate material using ion implantation
Patent
·
1992
·
OSTI ID:7274023