Process for forming one or more substantially pure layers in substrate material using ion implantation
This patent describes a process for forming a substantially pure, monocrystalline layer of an implantable element in a monocrystalline substrate. It comprises selecting an implantable element and a monocrystalline substrate to be implanted wherein, at the temperature to be used for the implantation and annealing; the solubilities of the implantable element and the substrate material in one another are less than 10 at. %; and no intermediate phases containing both the implantable element and the substrate material exist; implanting, at a temperature ranging from about {minus}196{degrees} C to about 10{degrees} C below the melting point of the substrate, at least about 5 {times} 10{sup 16} atoms/cm{sup 2} of the implantable element in the substrate; and annealing the implanted substrate at a temperature ranging from about 20{degrees} C to about 10{degrees} C below the melting point of the substrate for a period of time of about 1 second to about 100 hours.
- Assignee:
- US Dept. of Energy, Washington, DC (United States)
- Patent Number(s):
- US 5124174; A
- Application Number:
- PPN: US 7-625340
- OSTI ID:
- 7274023
- Resource Relation:
- Patent File Date: 11 Dec 1990
- Country of Publication:
- United States
- Language:
- English
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Process for forming one or more substantially pure layers in substrate material using ion implantation
Process for forming one or more substantially pure layers in substrate material using ion implantation
Related Subjects
SUPERCONDUCTIVITY AND SUPERFLUIDITY
MONOCRYSTALS
ION IMPLANTATION
THIN FILMS
FABRICATION
ANNEALING
CHEMICAL REACTION KINETICS
PROCESS CONTROL
SOLUBILITY
SUBSTRATES
CONTROL
CRYSTALS
FILMS
HEAT TREATMENTS
KINETICS
REACTION KINETICS
665300* - Interactions Between Beams & Condensed Matter- (1992-)