Process for forming one or more substantially pure layers in substrate material using ion implantation

Patent · 01 January 1992

OSTI ID:868358

Musket, Ronald G ^[1]; Brown, David W ^[2]; Munir, Zuhair A ^[3]

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1. San Ramon, CA
2. New Carrollton, MD
3. Davis, CA

A process is disclosed for forming a substantially pure monocrystalline layer of an implantable element in a monocrystalline substrate material by (a) selecting an implantable element and a monocrystalline substrate material to be implanted which, at the temperatures to be used, have limited mutual solubility in one another and do not form any intermediate phases with one another; (b) implanting a sufficient amount of the implantable element in the substrate material to permit formation of the desired substantially pure layer of the implantable element in the substrate material; and (c) annealing the implanted substrate material to form the desired layer. The annealing step may not be required if the desired layer was formed during the implantation. Also disclosed is an article made by the process.

• Research Organization: Lawrence Livermore National Laboratory (LLNL), Livermore, CA
• DOE Contract Number: W-7405-ENG-48
• Assignee: United States of America as represented by United States (Washington, DC)
• Patent Number(s): US 5124174
• OSTI ID: 868358
• Country of Publication: United States
• Language: English

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