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Title: Roughening instability and evolution of the Ge(001) surface during ion sputtering

Journal Article · · Physical Review Letters; (United States)
; ; ; ;  [1]
  1. Sandia National Laboratories, Albuquerque, New Mexico 87185 (United States)

We have investigated the temperature-dependent roughening kinetics of Ge surfaces during low energy ion sputtering using energy dispersive x-ray reflectivity. At 150 [degree]C and below, the surface is amorphized by ion impact and roughens to a steady state small value. At 250 [degree]C the surface remains crystalline, roughens exponentially with time, and develops a pronounced ripple topography. At higher temperature this exponential roughening is slower, with an initial sublinear time dependence. A model that contains a balance between smoothing by surface diffusion and viscous flow and roughening by atom removal explains the kinetics. Ripple formation is a result of a curvature-dependent sputter yield.

DOE Contract Number:
AC04-94AL85000
OSTI ID:
7072407
Journal Information:
Physical Review Letters; (United States), Vol. 72:19; ISSN 0031-9007
Country of Publication:
United States
Language:
English