Roughening instability and evolution of the Ge(001) surface during ion sputtering
- Sandia National Laboratories, Albuquerque, New Mexico 87185 (United States)
We have investigated the temperature-dependent roughening kinetics of Ge surfaces during low energy ion sputtering using energy dispersive x-ray reflectivity. At 150 [degree]C and below, the surface is amorphized by ion impact and roughens to a steady state small value. At 250 [degree]C the surface remains crystalline, roughens exponentially with time, and develops a pronounced ripple topography. At higher temperature this exponential roughening is slower, with an initial sublinear time dependence. A model that contains a balance between smoothing by surface diffusion and viscous flow and roughening by atom removal explains the kinetics. Ripple formation is a result of a curvature-dependent sputter yield.
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 7072407
- Journal Information:
- Physical Review Letters; (United States), Vol. 72:19; ISSN 0031-9007
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
GERMANIUM
PHYSICAL RADIATION EFFECTS
DIFFUSION
ION BEAMS
KINETICS
MICROSTRUCTURE
REFLECTIVITY
ROUGHNESS
SPUTTERING
SURFACE PROPERTIES
TEMPERATURE DEPENDENCE
VISCOUS FLOW
X-RAY SPECTROSCOPY
BEAMS
ELEMENTS
FLUID FLOW
METALS
OPTICAL PROPERTIES
PHYSICAL PROPERTIES
RADIATION EFFECTS
SPECTROSCOPY
360605* - Materials- Radiation Effects
360602 - Other Materials- Structure & Phase Studies
665300 - Interactions Between Beams & Condensed Matter- (1992-)
665100 - Nuclear Techniques in Condensed Matter Physics - (1992-)