Kinetics of surface roughening and smoothing during ion sputtering
Conference
·
OSTI ID:10121832
We have measured the kinetics of roughness evolution during low energy ion sputtering of SiO{sub 2} surfaces using in situ x-ray reflectivity. Sputtering with heavy ions (Xe) leads to rapid roughening of the surface that can not be explained by a simple random removal process. Subsequent bombardment with light ions (He,H) leads to an exponential decrease in the surface roughness. These kinetics are explained quantitatively by a linear model that contains a balance between smoothing by surface diffusion and viscous flow and roughening by sputter removal of material. A curvature dependent sputter yield leads to amplification of a limited range of spatial frequencies on the surface and the formation of a ripple topography.
- Research Organization:
- Sandia National Labs., Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE, Washington, DC (United States)
- DOE Contract Number:
- AC04-76DP00789
- OSTI ID:
- 10121832
- Report Number(s):
- SAND--93-1447C; CONF-931108--64; ON: DE94006358
- Country of Publication:
- United States
- Language:
- English
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