Tensile-strained GaAsP/GaInAsP/GaInP quantum well lasers

Journal Article · Fri Dec 31 23:00:00 EST 1993 · IEEE Photonics Technology Letters (Institute of Electrical and Electronics Engineers); (United States)

DOI:https://doi.org/10.1109/68.265870· OSTI ID:7071903

Zhang, G; Naeppi, J; Asonen, H; Pessa, M ^[1]

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1. Tampere Univ. of Technology (Finland). Dept. of Physics

Tensile-strained GaAsP/GaInAsP/GaInP separate-confinement-heterostructure single-quantum-well (SCH-SQW) lasers are reported for the first time. A low threshold current density of 261 A/cm[sup 2] and a high characteristic temperature of 190 K were obtained for a 1,600-[mu]m long broad-area laser having [minus]0.3% lattice strain. The internal quantum efficiency was as high as 93% and internal waveguide loss 3.3 cm[sup [minus]1]. Some primary results of unstrained GaAs/GaInAsP and compressive-strained (1.4%) InGaAs/GaInAsP SCH-SQW lasers are also presented. Both the tensile and compressive-strained lasers exhibited higher quantum efficiency than the unstrained lasers. On the other hand, the tensile-strained lasers had nearly the same internal waveguide loss and threshold current as the unstrained lasers.

• OSTI ID: 7071903
• Journal Information: IEEE Photonics Technology Letters (Institute of Electrical and Electronics Engineers); (United States), Journal Name: IEEE Photonics Technology Letters (Institute of Electrical and Electronics Engineers); (United States) Vol. 6:1; ISSN 1041-1135; ISSN IPTLEL
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
426002* -- Engineering-- Lasers & Masers-- (1990-)
ARSENIC COMPOUNDS
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EFFICIENCY
GALLIUM COMPOUNDS
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HETEROJUNCTIONS
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
JUNCTIONS
LASERS
PERFORMANCE
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
QUANTUM EFFICIENCY
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR LASERS
SOLID STATE LASERS