Envelope function calculations of linear and nonlinear gains in a strained-layer quantum-well laser

Journal Article · Wed Dec 01 04:00:00 EST 1993 · IEEE Journal of Quantum Electronics (Institute of Electrical and Electronics Engineers); (United States)

DOI:https://doi.org/10.1109/3.259399· OSTI ID:7071899

Ahn, Doyeol; Yoo, Taekyung ^[1]

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1. GoldStar Central Research Lab., Seoul (Korea, Republic of)

In this article, the authors study theoretically the linear and the nonlinear optical gains of strained-layer InGaAs-AlGaAs quantum well lasers with band mixing effects taken into account. Effects of the biaxial compressive strain of the InGaAs-AlGaAs quantum well on the band structure are investigated by solving for the Pikus-Bir Hamiltonian. The biaxial compressive strain separates the HH and the LH subbands by pulling down the HH subbands and pushing away the LH subbands from the valence band edge. Since the C-HH transition is dominated by the TE polarization they expect that the TE mode gain would be substantially larger than the TM mode gain in the strained InGaAs-AlGaAs quantum well. The gain and the gain-suppression coefficient of a strained quantum well laser are calculated from the complex optical susceptibility obtained by the density matrix formalism. Optical output power is calculated by solving the rate equations for the stationary states with nonlinear gain suppression. The calculated L-I characteristics show reasonable agreement with the experimental data.

• OSTI ID: 7071899
• Journal Information: IEEE Journal of Quantum Electronics (Institute of Electrical and Electronics Engineers); (United States), Journal Name: IEEE Journal of Quantum Electronics (Institute of Electrical and Electronics Engineers); (United States) Vol. 29:12; ISSN 0018-9197; ISSN IEJQA7
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
426002* -- Engineering-- Lasers & Masers-- (1990-)
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
AMPLIFICATION
ARSENIC COMPOUNDS
ARSENIDES
CALCULATION METHODS
DATA
ELECTRONIC STRUCTURE
GAIN
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HETEROJUNCTIONS
INDIUM ARSENIDES
INDIUM COMPOUNDS
INFORMATION
JUNCTIONS
LASERS
NUMERICAL DATA
PNICTIDES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR LASERS
SOLID STATE LASERS
THEORETICAL DATA