Optical gain in a strained-layer quantum-well laser

Journal Article · Wed Nov 30 23:00:00 EST 1988 · IEEE J. Quant. Electron.; (United States)

DOI:https://doi.org/10.1109/3.14369· OSTI ID:6474697

Ahn, D ^[1]; Chuang, S L ^[2]

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1. J. Watson Research Center, Yorktown Heights, NY (US)
2. Dept. of Electrical and Computer Engineering, Univ. of Illinois, Urbana, IL (US)

The optical gain and the refractive index change of a uni-axially stressed GaAs-Al/sub x/Ga/sub 1-x/. As quantum-well laser is studied theoretically using the multiband effective mass theory (k . rho method) and density matrix formalism with intraband relaxations. It is found that uniaxial strain of the quantum well substantially alters the subband structures and the optical gain of the quantum-well laser. In particular, the gain of the TM mode increases while the gain of the TE mode decreases with increasing stress. Thus, the threshold current either decreases or increases with the stress, depending on whether the laser is operating in a TM or TE mode.

• OSTI ID: 6474697
• Journal Information: IEEE J. Quant. Electron.; (United States), Journal Name: IEEE J. Quant. Electron.; (United States) Vol. 24:12; ISSN IEJQA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
AMPLIFICATION
ARSENIC COMPOUNDS
ARSENIDES
DENSITY MATRIX
GAIN
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
LASER MATERIALS
LASERS
MATERIALS
MATRICES
OPTICAL PROPERTIES
PHYSICAL PROPERTIES
PNICTIDES
QUANTUM ELECTRONICS