Excitation and de-excitation mechanisms of Er-doped GaAs and AlGaAs. Doctoral thesis
Technical Report
·
OSTI ID:7071403
Electrical and optical characterization have been performed on GaAs and AlxGa1-xAs samples doped with Er either by ion implantation or during Molecular Beam Epitaxial (MBE) growth. Deep Level Transient Spectroscopy (DLTS) and Temperature-Dependent Hall Effect (TDH) measurements indicated the presence of two hole traps in Er-doped GaAs, at 35 and 360 meV above the valence band maximum. The former (shallower) center was thought to be due to Er substituting for a Ga atom (ErGa) and giving rise to an isoelectronic impurity potential. The second center was attributed to an Er atom occupying an interstitial position (Er(i)). Annealing studies performed on Er-implanted GaAs indicated that the ErGa center preferentially formed at higher annealing temperatures ( > 850 deg C), with the Er(i) reaching a maximum concentration at an annealing temperature of around 750 deg C. Optical characterization performed by Photoluminescence (PL) measurements showed that the Er(i) center gave a much stronger Er-related intra-4f shell emission. Mechanisms for the excitation of the 4f shells of these two centers are discussed. Similar optically active Eri centers may be forming in AlGaAs....Rare earth, Er, DLTS, Isoelectronic, GaAs, AlGaAs, Ion implantation, MBE, Luminescence, Hall effect.
- Research Organization:
- Air Force Inst. of Tech., Wright-Patterson AFB, OH (United States). School of Engineering
- OSTI ID:
- 7071403
- Report Number(s):
- AD-A-258814/3/XAB; AFIT/DS/ENP--92-05
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
36 MATERIALS SCIENCE
360606* -- Other Materials-- Physical Properties-- (1992-)
ALLOYS
ALUMINIUM COMPOUNDS
ANNEALING
ARSENIC COMPOUNDS
ARSENIDES
CRYSTAL DOPING
DE-EXCITATION
DEEP LEVEL TRANSIENT SPECTROSCOPY
DIAGNOSTIC USES
ELECTRICAL PROPERTIES
ELEMENTS
ENERGY-LEVEL TRANSITIONS
EPITAXY
ERBIUM
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HALL EFFECT
HEAT TREATMENTS
HOLES
IMPURITIES
INTERMETALLIC COMPOUNDS
ION IMPLANTATION
LUMINESCENCE
METALS
MOLECULAR BEAM EPITAXY
OPTICAL PROPERTIES
PHOTOLUMINESCENCE
PHYSICAL PROPERTIES
PNICTIDES
RARE EARTHS
SPECTROSCOPY
USES
360606* -- Other Materials-- Physical Properties-- (1992-)
ALLOYS
ALUMINIUM COMPOUNDS
ANNEALING
ARSENIC COMPOUNDS
ARSENIDES
CRYSTAL DOPING
DE-EXCITATION
DEEP LEVEL TRANSIENT SPECTROSCOPY
DIAGNOSTIC USES
ELECTRICAL PROPERTIES
ELEMENTS
ENERGY-LEVEL TRANSITIONS
EPITAXY
ERBIUM
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HALL EFFECT
HEAT TREATMENTS
HOLES
IMPURITIES
INTERMETALLIC COMPOUNDS
ION IMPLANTATION
LUMINESCENCE
METALS
MOLECULAR BEAM EPITAXY
OPTICAL PROPERTIES
PHOTOLUMINESCENCE
PHYSICAL PROPERTIES
PNICTIDES
RARE EARTHS
SPECTROSCOPY
USES