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A class of single-source precursors to titanium disulfide films. Synthesis, structure, and chemical vapor deposition studies of [TiCl[sub 4](HSR)[sub 2]]

Journal Article · · Inorganic Chemistry; (United States)
DOI:https://doi.org/10.1021/ic00070a007· OSTI ID:7071160
;  [1];  [2];  [3]
  1. Wayne State Univ., Detroit, MI (United States)
  2. Ford Motor Company, Dearborn, MI (United States)
  3. Univ. of Delaware, Newark (United States)

Titanium disulfide is one of the desirable cathode materials for lithium batteries. Recent emphasis on the development of thin-film batteries has underscored the need for high-purity, crystallographically oriented, stoichiometric coatings. The majority of chemical vapor deposition (CVD) routes of TiS[sub 2] films are based on the reaction between titanium tetrachloride and hydrogen sulfide, organic sulfides, or disulfides. Recently we reported a new atmospheric pressure CVD process for TiS[sub 2] films, which relies upon the reaction of titanium tetrachloride with organothiols at temperature [ge]200 [degrees]C and affords highly pure, crystallographically oriented, stoichiometric, adhesive coatings[sup 5]. It was envisaged the use of a single-source precursor in the deposition of TiS[sub 2] films could provide precise control of titanium and sulfur stoichiometry, could reduce toxic/odiferous waste, and would eliminate the problem of mixing two or more gaseous reactants in a low-pressure CVD reactor. However, no such precursor had been described in the literature. Herein the authors report the synthesis of the first class of single-source precursors to high quality TiS[sub 2] films. These complexes are of the formula [TiCl[sub 4](HSR)[sub 2]] and are obtained upon treatment of titanium tetrachloride with alkanethiols. Significantly, the crystallographic orientation of the films produced from these precursors is ideal for use as cathodes in lithium batteries.

OSTI ID:
7071160
Journal Information:
Inorganic Chemistry; (United States), Journal Name: Inorganic Chemistry; (United States) Vol. 32:18; ISSN 0020-1669; ISSN INOCAJ
Country of Publication:
United States
Language:
English