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Low-temperature atmospheric pressure chemical vapor deposition of titanium disulfide films

Journal Article · · Chemistry of Materials; (United States)
DOI:https://doi.org/10.1021/cm00024a007· OSTI ID:6925636
;  [1];  [2]
  1. Wayne State Univ., Detroit, MI (United States)
  2. Ford Motor Co., Dearborn, MI (United States)

A new atmospheric vapor deposition process for TiS[sub 2] films was developed; it relies upon the reaction of Ti tetrachloride with organothiols at temperatures as low as 200[degree]C, yielding TiS[sub 2] coatings with crystallographic orientation well suited for use as cathodes in Li batteries. The adhesion, surface finish and density of these films are superior to those obtained using H[sub 2] as the source of S. The material has a low C content, implying an efficient carbon-sulfur cleavage. The reflectivity of the films is consistently high. At 300[degree]C the density of the film is 2.81 g/cm[sup 3], or 87% of the bulk density of TiS[sup 2].

OSTI ID:
6925636
Journal Information:
Chemistry of Materials; (United States), Journal Name: Chemistry of Materials; (United States) Vol. 4:6; ISSN CMATEX; ISSN 0897-4756
Country of Publication:
United States
Language:
English