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Growth and characterization of GaInP unicompositional disorder-order-disorder quantum wells

Journal Article · · Applied Physics Letters; (United States)
DOI:https://doi.org/10.1063/1.112307· OSTI ID:7071041
; ;  [1]
  1. Sandia National Laboratories, Albuquerque, New Mexico 87185-0603 (United States)
Metalorganic vapor phase epitaxy (MOVPE) is used to grow unicompositional quantum-well (QW) structures, in which the QW and barrier layers are composed of ordered and disordered GaInP, respectively. Transmission electron dark-field micrographs reveal abrupt interfaces between highly ordered QWs and disordered barriers, with no evidence of defect formation. Low-temperature photoluminescence from the structures exhibits relatively broad emission peaks, with emission energy increasing with decreasing QW thickness. The dependence of emission energy on well thickness can be described by a finite square well model only when a type-II band alignment is taken for the heterostructure, in which the conduction band edge of the ordered GaInP QW lies about 135--150 meV below that of the disordered barrier material. These results demonstrate a high degree of control over the ordering process in MOVPE, such that quantum size effects can be realized solely through disorder-order phenomena. Further, the data provide strong support for a type-II (spatially indirect) recombination transition between ordered and disordered GaInP.
DOE Contract Number:
AC04-94AL85000
OSTI ID:
7071041
Journal Information:
Applied Physics Letters; (United States), Journal Name: Applied Physics Letters; (United States) Vol. 65:5; ISSN APPLAB; ISSN 0003-6951
Country of Publication:
United States
Language:
English