Quantum wells due to ordering in GaInP

Journal Article · Tue Dec 01 04:00:00 EST 1998 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.122931· OSTI ID:675109

Hsu, Y; Stringfellow, G B ^[1]; Inglefield, C E; DeLong, M C; Taylor, P C ^[2]; Cho, J H; Seong, T ^[3]

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1. Department of Materials Science and Engineering, University of Utah, Salt Lake City, Utah 84112 (United States)
2. Department of Physics, University of Utah, Salt Lake City, Utah 84112 (United States)
3. Department of Materials Science and Engineering, Kwangju Institute of Science and Technology, Kwangju 506-712 (Korea)

CuPt ordering results in a reduction of the band-gap energy of GaInP. Thus, heterostructures and quantum wells can be produced by simply varying the order parameter, without changing the solid composition. Changes in the order parameter can be induced by changes in growth conditions. The disordered/ordered/disordered quantum wells described here are grown by changing the PH{sub 3} flow rate. Transmission electron microscopy results show that the quantum wells produced in this way are clearly defined, with abrupt interfaces. Low-temperature photoluminescence spectra show distinct peaks from quantum wells (QWs) of different widths. The QW photoluminescence peak energy increases with decreasing well width due to quantum size effects. The difference in band-gap energy between the ordered and disordered single layers is determined from photoluminescence excitation spectroscopy to be 0.06 eV. {copyright} {ital 1998 American Institute of Physics.}

• OSTI ID: 675109
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 26 Vol. 73; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ENERGY GAP
GALLIUM COMPOUNDS
GALLIUM PHOSPHIDES
HETEROJUNCTIONS
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
INTERFACES
LATTICE PARAMETERS
ORDER PARAMETERS
PHOTOLUMINESCENCE
TRANSMISSION ELECTRON MICROSCOPY