Ordering and phase separation in MOCVD InGaP alloys and unicompositional quantum wells

Conference · Fri Dec 31 04:00:00 EST 1993

OSTI ID:10110857

Follstaedt, D M; Schneider, Jr, R P; Jones, E D

The microstructures of In{sub 0.5}Ga{sub 0.5}P alloys grown on (100) GaAs by MOVPE have been characterized with cross-section TEM and their optical emission examined with photoluminescence at low temperatures. All the alloys exhibit spinodal-like decomposition with compositional modulations along directions in the growth plane. Alloys grown at 775C have the highest emission energy, 2.0 eV, while those at 675C have the lowest, 1.89 eV, due to strong CuPt-type ordering of In and Ga. The ordered domains are platelets 20 to 200 nm wide and 10--20 nm thick with antiphase boundaries 1--2 nm apart. We have also formed ``unicompositional`` quantum wells of thin (1.3--20 nm) ordered layers grown at 675C between disordered barriers grown at 775C. Ordering is found only in the active layer, with domains similar to those of thick layers. The emission energy increases by 90 meV as the well thickness is decreased from 10 to 1.3 nm, thus demonstrating quantum size effects solely through disorder-order phenomena.

• Research Organization: Sandia National Labs., Albuquerque, NM (United States)
• Sponsoring Organization: USDOE, Washington, DC (United States)
• DOE Contract Number: AC04-94AL85000
• OSTI ID: 10110857
• Report Number(s): SAND--93-1493C; CONF-931108--24; ON: DE94004693; BR: GB0103012
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360602
42 ENGINEERING
426000
COMPONENTS
ELECTRON DEVICES AND CIRCUITS
DOMAIN STRUCTURE
EPITAXY
GALLIUM PHOSPHIDES
INDIUM PHOSPHIDES
MICROSTRUCTURE
ORDER-DISORDER TRANSFORMATIONS
ORGANOMETALLIC COMPOUNDS
SEMICONDUCTOR DEVICES
STRUCTURE AND PHASE STUDIES