Depth profiles of perpendicular and parallel strain in a GaAs/sub x/P/sub 1//sub -x//GaP superlattice
Journal Article
·
· Appl. Phys. Lett.; (United States)
Using double-crystal x-ray rocking curves, depth profiles of parallel and perpendicular strain were obtained in a GaAs/sub 0.14/P/sub 0.86//GaP superlattice grown on a buffer layer on (100) GaP. Combining symmetric Fe K/sub alpha1/ (400) and asymmetric Cu K/sub alpha1/ (422) reflections, a constant parallel strain of 0.19% relative to the substrate was found throughout the superlattice and buffer layer. Relative to the substrate, the perpendicular strain was found to be 0.26% in the buffer, and 0.80% and -0.19% in the 176-A-thick superlattice GaAs/sub x/P/sub 1-x/ and GaP layers, respectively. The strain profiles indicate the buffer is approx.80% decoupled from the substrate by misfit dislocations near the buffer/substrate interface, and the lattice misfit in the superlattice is elastically accommodated by the epitaxial structure with a small shift in the average lattice constant relative to the equilibrium superlattice structure.
- Research Organization:
- California Instiute of Technology, Pasadena, California 91125
- DOE Contract Number:
- AC04-76DP00789
- OSTI ID:
- 7056394
- Journal Information:
- Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 45:3; ISSN APPLA
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
36 MATERIALS SCIENCE
360601 -- Other Materials-- Preparation & Manufacture
360602* -- Other Materials-- Structure & Phase Studies
ARSENIC COMPOUNDS
ARSENIDES
COHERENT SCATTERING
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
DATA
DIFFRACTION
DISLOCATIONS
EPITAXY
EXPERIMENTAL DATA
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GALLIUM PHOSPHIDES
INFORMATION
INTERFACES
LATTICE PARAMETERS
LINE DEFECTS
NUMERICAL DATA
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
SCATTERING
STRAINS
SUPERLATTICES
X-RAY DIFFRACTION
360601 -- Other Materials-- Preparation & Manufacture
360602* -- Other Materials-- Structure & Phase Studies
ARSENIC COMPOUNDS
ARSENIDES
COHERENT SCATTERING
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
DATA
DIFFRACTION
DISLOCATIONS
EPITAXY
EXPERIMENTAL DATA
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GALLIUM PHOSPHIDES
INFORMATION
INTERFACES
LATTICE PARAMETERS
LINE DEFECTS
NUMERICAL DATA
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
SCATTERING
STRAINS
SUPERLATTICES
X-RAY DIFFRACTION