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Depth profiles of perpendicular and parallel strain in a GaAs/sub x/P/sub 1//sub -x//GaP superlattice

Journal Article · · Appl. Phys. Lett.; (United States)
DOI:https://doi.org/10.1063/1.95190· OSTI ID:7056394
Using double-crystal x-ray rocking curves, depth profiles of parallel and perpendicular strain were obtained in a GaAs/sub 0.14/P/sub 0.86//GaP superlattice grown on a buffer layer on (100) GaP. Combining symmetric Fe K/sub alpha1/ (400) and asymmetric Cu K/sub alpha1/ (422) reflections, a constant parallel strain of 0.19% relative to the substrate was found throughout the superlattice and buffer layer. Relative to the substrate, the perpendicular strain was found to be 0.26% in the buffer, and 0.80% and -0.19% in the 176-A-thick superlattice GaAs/sub x/P/sub 1-x/ and GaP layers, respectively. The strain profiles indicate the buffer is approx.80% decoupled from the substrate by misfit dislocations near the buffer/substrate interface, and the lattice misfit in the superlattice is elastically accommodated by the epitaxial structure with a small shift in the average lattice constant relative to the equilibrium superlattice structure.
Research Organization:
California Instiute of Technology, Pasadena, California 91125
DOE Contract Number:
AC04-76DP00789
OSTI ID:
7056394
Journal Information:
Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 45:3; ISSN APPLA
Country of Publication:
United States
Language:
English