Electronic structure of GaAs/sub x/P/sub 1-x//GaP strained-layer superlattices with x<0. 5

Journal Article · Thu Jul 01 04:00:00 EDT 1982 · J. Vac. Sci. Technol.; (United States)

DOI:https://doi.org/10.1116/1.571681· OSTI ID:5118293

Osbourn, G C

The electronic properties of GaAs/sub x/P/sub 1-x//GaP(100) strained-layer superlattices with x<0.5 are studied using both a tight-binding model and an effective-mass model. By varying the alloy compositions and thicknesses of the layers, it is possible to independently vary the band gap and lattice constant of these structures. For the structures in which the bulk (100) minima are mapped into the strained-layer superlattice GAMMA point, a direct band gap occurs in the superlattice even though the bulk materials have indirect gaps. The results illustrate that strained-layer superlattices in general form a broad new class of semiconductor materials with tailorable electronic properties.

• Research Organization: Sandia National Laboratories, Albuquerque, New Mexico 87185
• DOE Contract Number: AC04-76DP00789
• OSTI ID: 5118293
• Journal Information: J. Vac. Sci. Technol.; (United States), Journal Name: J. Vac. Sci. Technol.; (United States) Vol. 21:2; ISSN JVSTA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360603* -- Materials-- Properties
ARSENIC COMPOUNDS
ARSENIDES
DIMENSIONS
ELECTRONIC STRUCTURE
ENERGY GAP
ENERGY LEVELS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GALLIUM PHOSPHIDES
LATTICE PARAMETERS
LAYERS
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
QUANTITY RATIO
SUPERLATTICES
THICKNESS