Surface electronic structure and off-site Auger transitions on TaC(111) observed with Auger-photoelectron coincidence spectroscopy
Journal Article
·
· Physical Review Letters; (United States)
- Department of Physics and Astronomy, Rutgers University, P.O. Box 849, Piscataway, New Jersey 08855-0849 (United States)
- National Synchrotron Light Source, Brookhaven National Laboratory, Upton, New York 11973 (United States)
- Department of Physics, Brookhaven National Laboratory, Upton, New York 11973 (United States)
- Solid State Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831-6057 (United States)
The Ta {ital N}{sub 7}-{ital VV} Auger spectrum of TaC(111) has been measured in coincidence with photoemission from the bulk and surface shifted Ta 4{ital f}{sub 7/2} core levels. Good agreement is found between the surface Auger spectrum and a self-convolution of the density of states (SCDOS) at surface Ta sites determined by a first-principles calculation. The bulk spectrum disagrees with the bulk SCDOS but is well described by an incoherent sum of the bulk SCDOS and the surface spectrum. A novel off-site Auger decay mechanism, first observed on Ta(100), accounts for these observations.
- DOE Contract Number:
- AC02-76CH00016; AC05-84OR21400
- OSTI ID:
- 7048199
- Journal Information:
- Physical Review Letters; (United States), Journal Name: Physical Review Letters; (United States) Vol. 68:14; ISSN PRLTA; ISSN 0031-9007
- Country of Publication:
- United States
- Language:
- English
Similar Records
A comparison of the surface electronic structure of Ta(100) and TaC(111) using Auger-photoelectron coincidence spectroscopy
Surface electronic structure of GaAs(110) studied by Auger photoelectron coincidence spectroscopy
Surface electronic structure of GaAs(110) studied by Auger photoelectron coincidence spectroscopy
Journal Article
·
Wed May 01 00:00:00 EDT 1991
· Journal of Vacuum Science and Technology, A (Vacuum, Surfaces and Films); (USA)
·
OSTI ID:5692228
Surface electronic structure of GaAs(110) studied by Auger photoelectron coincidence spectroscopy
Journal Article
·
Wed May 01 00:00:00 EDT 1991
· Journal of Vacuum Science and Technology, A (Vacuum, Surfaces and Films); (USA)
·
OSTI ID:5487647
Surface electronic structure of GaAs(110) studied by Auger photoelectron coincidence spectroscopy
Conference
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Sun Dec 30 23:00:00 EST 1990
·
OSTI ID:10142345
Related Subjects
36 MATERIALS SCIENCE
360204* -- Ceramics
Cermets
& Refractories-- Physical Properties
AUGER EFFECT
BINDING ENERGY
CARBIDES
CARBON COMPOUNDS
COINCIDENCE METHODS
COUNTING TECHNIQUES
DATA
ELECTRONIC STRUCTURE
ELEMENTS
EMISSION
ENERGY
ENERGY-LEVEL DENSITY
EXPERIMENTAL DATA
INFORMATION
METALS
NUMERICAL DATA
PHOTOEMISSION
REFRACTORY METAL COMPOUNDS
SECONDARY EMISSION
SURFACE PROPERTIES
TANTALUM
TANTALUM CARBIDES
TANTALUM COMPOUNDS
TRANSITION ELEMENT COMPOUNDS
TRANSITION ELEMENTS
360204* -- Ceramics
Cermets
& Refractories-- Physical Properties
AUGER EFFECT
BINDING ENERGY
CARBIDES
CARBON COMPOUNDS
COINCIDENCE METHODS
COUNTING TECHNIQUES
DATA
ELECTRONIC STRUCTURE
ELEMENTS
EMISSION
ENERGY
ENERGY-LEVEL DENSITY
EXPERIMENTAL DATA
INFORMATION
METALS
NUMERICAL DATA
PHOTOEMISSION
REFRACTORY METAL COMPOUNDS
SECONDARY EMISSION
SURFACE PROPERTIES
TANTALUM
TANTALUM CARBIDES
TANTALUM COMPOUNDS
TRANSITION ELEMENT COMPOUNDS
TRANSITION ELEMENTS