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Surface electronic structure of GaAs(110) studied by Auger photoelectron coincidence spectroscopy

Journal Article · · Journal of Vacuum Science and Technology, A (Vacuum, Surfaces and Films); (USA)
DOI:https://doi.org/10.1116/1.577542· OSTI ID:5487647
 [1];  [2];  [1];  [3];  [4]
  1. Department of Physics and Astronomy and The Laboratory for Surface Modification, Rutgers University, Piscataway, New Jersey 08855-0849 (USA)
  2. Department of Physics, Brandeis University, Waltham, Massachusetts 02254 (USA)
  3. National Synchrotron Light Source, Brookhaven National Laboratory, Upton, New York 11973 (USA)
  4. Department of Physics, Brookhaven National Laboratory, Upton, New York 11973 (USA)
Auger photoelectron coincidence spectroscopy has been used to study the {ital M}{sub 4,5}{ital VV} Auger spectra of GaAs(110). Using this technique, the Ga and As spectra can be separated and studied independently. The line shape of the As-{ital M}{sub 4,5}{ital VV} measured in coincidence with the As 3{ital d} photoemission line differs significantly from the conventional Auger spectrum. This is attributed to the surface electronic properties of the system. In addition, it is found that the {ital ss} component of the As spectrum is more intense than expected based on calculations using atomic matrix elements. The Ga-{ital M}{sub 4,5}{ital VV} spectrum, of which only the {ital pp} component is observed, agrees well with that expected from an independent electron model. A first principles electronic structure calculation of a five-layer GaAs(110) slab has been performed to aid in the interpretation of the Auger spectra.
DOE Contract Number:
AC02-76CH00016
OSTI ID:
5487647
Journal Information:
Journal of Vacuum Science and Technology, A (Vacuum, Surfaces and Films); (USA), Journal Name: Journal of Vacuum Science and Technology, A (Vacuum, Surfaces and Films); (USA) Vol. 9:3; ISSN 0734-2101; ISSN JVTAD
Country of Publication:
United States
Language:
English