Surface electronic structure of GaAs(110) studied by Auger photoelectron coincidence spectroscopy
Journal Article
·
· Journal of Vacuum Science and Technology, A (Vacuum, Surfaces and Films); (USA)
- Department of Physics and Astronomy and The Laboratory for Surface Modification, Rutgers University, Piscataway, New Jersey 08855-0849 (USA)
- Department of Physics, Brandeis University, Waltham, Massachusetts 02254 (USA)
- National Synchrotron Light Source, Brookhaven National Laboratory, Upton, New York 11973 (USA)
- Department of Physics, Brookhaven National Laboratory, Upton, New York 11973 (USA)
Auger photoelectron coincidence spectroscopy has been used to study the {ital M}{sub 4,5}{ital VV} Auger spectra of GaAs(110). Using this technique, the Ga and As spectra can be separated and studied independently. The line shape of the As-{ital M}{sub 4,5}{ital VV} measured in coincidence with the As 3{ital d} photoemission line differs significantly from the conventional Auger spectrum. This is attributed to the surface electronic properties of the system. In addition, it is found that the {ital ss} component of the As spectrum is more intense than expected based on calculations using atomic matrix elements. The Ga-{ital M}{sub 4,5}{ital VV} spectrum, of which only the {ital pp} component is observed, agrees well with that expected from an independent electron model. A first principles electronic structure calculation of a five-layer GaAs(110) slab has been performed to aid in the interpretation of the Auger spectra.
- DOE Contract Number:
- AC02-76CH00016
- OSTI ID:
- 5487647
- Journal Information:
- Journal of Vacuum Science and Technology, A (Vacuum, Surfaces and Films); (USA), Journal Name: Journal of Vacuum Science and Technology, A (Vacuum, Surfaces and Films); (USA) Vol. 9:3; ISSN 0734-2101; ISSN JVTAD
- Country of Publication:
- United States
- Language:
- English
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