Surface electronic structure of GaAs(110) studied by Auger photoelectron coincidence spectroscopy

Conference · Mon Dec 31 04:00:00 EST 1990

OSTI ID:10142345

Bartynski, R A; Garrison, K ^[1]; Jensen, E ^[2]; Hulbert, S L; Weinert, M ^[3]

---

1. Rutgers--the State Univ., Piscataway, NJ (United States)
2. Brandeis Univ., Waltham, MA (United States). Dept. of Physics
3. Brookhaven National Lab., Upton, NY (United States)

We have used Auger photoelectron coincidence spectroscopy to study the M{sub 4,5}VV Auger spectra of GaAs(110). Using this technique, the Ga and As spectra can be separated and studied independently. The lineshape of the As-M{sub 4,5}VV measured in coincidence with the As 3d photoemission line differs significantly from the conventional Auger spectrum. We attribute this to the surface electronic properties of the system. In addition, we have found that the ss-component of the As spectrum is more intense than expected based on calculations using atomic matrix elements. The Ga-M{sub 4,5}VV spectrum, of which only the pp-component is observed, agrees well with that expected from an independent electron model. A first principles electronic structure calculation of a 5-layer GaAs(110) slab has been performed to aid in the interpretation of the Auger spectra.

• Research Organization: Brookhaven National Lab., Upton, NY (United States)
• Sponsoring Organization: USDOE, Washington, DC (United States); National Science Foundation, Washington, DC (United States)
• DOE Contract Number: AC02-76CH00016
• OSTI ID: 10142345
• Report Number(s): BNL--47318; CONF-901035--22; RU--57-90; ON: DE92012211; CNN: Grant-DMR-85-19059
• Country of Publication: United States
• Language: English

Related Subjects

665100
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
AUGER EFFECT
AUGER ELECTRON SPECTROSCOPY
ELECTRONIC STRUCTURE
GALLIUM ARSENIDES
NUCLEAR TECHNIQUES IN CONDENSED MATTER PHYSICS
PHOTOELECTRON SPECTROSCOPY
SURFACES