CH sub 4 /H sub 2 reactive ion etching for gate recessing of pseudomorphic modulation doped field effect transistors

Journal Article · · Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena; (United States)

OSTI ID:7047972

Pereira, R; Hove, M van; Raedt, W de; Jansen, Ph; Borghs, G; Jonckheere, R; Rossum, M van ^[1]

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1. Interuniversity Microelectronics Center, Leuven (Belgium)

Pseudomorphic AlGaAs/InGaAs modulation doped field effect transistors have been fabricated by using methane/hydrogen (CH{sub 4}/H{sub 2}) reactive ion etching for gate recessing. Source-drain resistance and Hall measurements on as etched and annealed samples are presented. The electrical degradation introduced by the plasma can be recovered after annealing at 400C. A threshold voltage (V{sub th}) standard deviation of 14 mV over a 5 cm (2 in.) wafer was obtained.

• OSTI ID: 7047972
• Journal Information: Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena; (United States), Journal Name: Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena; (United States) Vol. 9:4; ISSN 0734-211X; ISSN JVTBD
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360601* -- Other Materials-- Preparation & Manufacture
ALKANES
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ANNEALING
ARSENIC COMPOUNDS
ARSENIDES
CHARGED PARTICLES
ELECTRICAL PROPERTIES
ELECTRONIC CIRCUITS
ELEMENTS
ETCHING
FABRICATION
FIELD EFFECT TRANSISTORS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GATING CIRCUITS
HEAT TREATMENTS
HYDROCARBONS
HYDROGEN
INDIUM ARSENIDES
INDIUM COMPOUNDS
IONS
METHANE
NONMETALS
ORGANIC COMPOUNDS
PHYSICAL PROPERTIES
PNICTIDES
SEMICONDUCTOR DEVICES
SURFACE FINISHING
TRANSISTORS