CH{sub 4}/H{sub 2}/Ar electron cyclotron resonance plasma etching for GaAs-based field effect transistors
- Eindhoven Univ. of Technology (Netherlands)
Electron cyclotron resonance (ECR) plasma etch processes with CH{sub 4}/H{sub 2}/Ar have been investigated on different III-V semiconductor materials (GaAs, AlGaAs, InGaAs, and InP). The passivation depth as a function of the GaAs carrier concentration and the recovery upon annealing at different temperatures have been determined by C-V measurements. Little degradation on the characteristics of Schottky diodes is observed with increasing process biases. If the GaAs top layer of an AlGaAs/GaAs heterostructure is removed by plasma processing the Hall mobility is restored to 74% after annealing at 425 C. This is compared to a wet chemically etched reference sample. The 2-DEG sheet density fully recovers. However, if an Si {delta}-doped layer is incorporated in the heterostructure the Hall mobility and the sheet density completely restore after plasma etching and subsequent annealing. In the experiments minimal damage is observed at a substrate bias of {minus}40 V. The direct current and high frequency characteristics of a dry and wet etched pseudomorphic heterostructure field-effect transistors are compared.
- Sponsoring Organization:
- USDOE
- OSTI ID:
- 110138
- Journal Information:
- Journal of the Electrochemical Society, Vol. 142, Issue 8; Other Information: PBD: Aug 1995
- Country of Publication:
- United States
- Language:
- English
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