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Surface morphology of epitaxial Ge on Si grown by plasma enhanced chemical vapor deposition

Conference · · Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena; (United States)
OSTI ID:7047953
;  [1];  [2];  [3]
  1. Univ. of Vermont, Burlington (United States)
  2. Univ. of North Carolina, Charlotte (United States)
  3. United Technologies, Hartford, CT (United States)
+ Show Author Affiliations

Heteroepitaxial Ge films have been deposited on (100) Si substrates at low temperature (325C) by electron cyclotron resonance plasma enhanced chemical vapor deposition. The substrates were subjected to an in situ hydrogen/argon plasma etch prior to film growth to remove carbon and oxygen. The surface morphology has been observed with optical and scanning electron and scanning tunneling microscopy. Surface roughness due to three dimensional growth is strongly influenced by ion flux and arrival rate of reactive species on the growth surface. Surface roughness has a detrimental effect on the crystallinity of the deposited films as determined by reflection high-energy electron diffraction and x-ray diffraction measurements.

OSTI ID:
7047953
Report Number(s):
CONF-901035--
Journal Information:
Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena; (United States), Journal Name: Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena; (United States) Vol. 9:4; ISSN 0734-211X; ISSN JVTBD
Country of Publication:
United States
Language:
English

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Related Subjects

36 MATERIALS SCIENCE
360601* -- Other Materials-- Preparation & Manufacture
360602 -- Other Materials-- Structure & Phase Studies
ARGON
CHEMICAL COATING
CHEMICAL VAPOR DEPOSITION
DEPOSITION
ELECTRON MICROSCOPY
ELEMENTS
ETCHING
FLUIDS
GASES
GERMANIUM
HYDROGEN
METALS
MICROSCOPY
MORPHOLOGY
NONMETALS
OPTICAL MICROSCOPY
PLASMA
RARE GASES
ROUGHNESS
SCANNING ELECTRON MICROSCOPY
SEMIMETALS
SILICON
SUBSTRATES
SURFACE COATING
SURFACE FINISHING
SURFACE PROPERTIES