Atomic-level investigation of the growth of Si/Ge by ultrahigh vacuum chemical vapor deposition
- Institute of Physics, National Chiao-Tung University, Hsinchu, Taiwan, Republic of (China)
- Department of Physics and Materials Research Laboratory, University of Illinois, Urbana, Illinois 61801 (United States)
Si and Ge films can be prepared under ultrahigh vacuum conditions by chemical vapor deposition using disilane and digermane as source gases. These gases offer a high sticking probability, and are suitable for atomic layer epitaxy. Using synchrotron radiation photoemission spectroscopy and scanning tunneling microscopy, we have examined the surface processes associated with the heteroepitaxial growth of Ge/Si. The measured surface-induced shifts and chemical shifts of the Si 2p and Ge 3d core levels allow us to identify the surface species and to determine the surface chemical composition, and this information is correlated with the atomic features observed by scanning tunneling microscopy. Issues related to precursor dissociation, attachment to dangling bonds, diffusion, surface segregation, growth morphology, and pyrolytic reaction pathways will be discussed. {copyright} {ital 1997 American Vacuum Society.}
- Research Organization:
- University of Illinois
- DOE Contract Number:
- FG02-91ER45439
- OSTI ID:
- 509001
- Report Number(s):
- CONF-961002--
- Journal Information:
- Journal of Vacuum Science and Technology, A, Journal Name: Journal of Vacuum Science and Technology, A Journal Issue: 3 Vol. 15; ISSN 0734-2101; ISSN JVTAD6
- Country of Publication:
- United States
- Language:
- English
Similar Records
Adsorption, thermal reaction, and desorption of disilane on Ge(111)-[ital c](2[times]8)
Scanning-tunneling-microscopy studies of disilane adsorption and pyrolytic growth on Si(100)-(2x1)