Adsorption, thermal reaction, and desorption of disilane on Ge(111)-[ital c](2[times]8)

Journal Article · Sat Jan 15 00:00:00 EST 1994 · Physical Review, B: Condensed Matter; (United States)

DOI:https://doi.org/10.1103/PhysRevB.49.1836· OSTI ID:5446560

Lin, D; Hirschorn, E S; Miller, T; Chiang, T ^[1]

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1. Department of Physics, University of Illinois, 1110 West Green Street, Urbana, Illinois 61801-3080 (United States) Materials Research Laboratory, University of Illinois, 104 South Goodwin Avenue, Urbana, Illinois 61801-2902 (United States)

Room-temperature adsorption of disilane (Si[sub 2]H[sub 6]) on Ge(111)-[ital c](2[times]8) and subsequent thermal reactions and desorption at elevated temperatures were studied using scanning tunneling microscopy and core-level photoemission. The initial adsorption results in the formation of various surface radicals, and the reacted areas on the surface grow laterally for increasing exposures. The sticking coefficient is rather low, and an exposure greater than about 30 000 langmuirs is needed to saturate the surface. The net amount of Si deposited for the saturated surface is about one-half of an atomic layer. Thermal annealing causes the hydrogen atoms to desorb and the Si atoms to move below the surface. For annealing temperatures beyond about 630 K, the desorption of hydrogen becomes complete, all of the Si atoms move below the surface, and the resulting surface resembles the starting clean Ge(111)-[ital c](2[times]8) surface except that the [ital c](2[times]8) long-range order is partially destroyed. Step flow and island coarsening, similar to growth by molecular-beam epitaxy, are observed.

• DOE Contract Number: FG02-91ER45439
• OSTI ID: 5446560
• Journal Information: Physical Review, B: Condensed Matter; (United States), Vol. 49:3; ISSN 0163-1829
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
GERMANIUM
SORPTIVE PROPERTIES
HYDROGEN
DESORPTION
SILANES
CHEMISORPTION
SILICON
DIFFUSION
EPITAXY
PHOTOEMISSION
TEMPERATURE DEPENDENCE
TEMPERATURE RANGE 0400-1000 K
CHEMICAL REACTIONS
ELEMENTS
EMISSION
HYDRIDES
HYDROGEN COMPOUNDS
METALS
NONMETALS
ORGANIC COMPOUNDS
ORGANIC SILICON COMPOUNDS
SECONDARY EMISSION
SEMIMETALS
SEPARATION PROCESSES
SILICON COMPOUNDS
SORPTION
SURFACE PROPERTIES
TEMPERATURE RANGE
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