Influence of thermal annealing on the electron mobility in modulation doped Si/SiGe heterostructure
Conference
·
· Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena; (United States)
OSTI ID:7047926
- Daimler-Benz Research Center, Ulm (Germany)
The authors grew n-type modulation doped Si/SiGe multiple quantum well structures with the highest electron mobilities reported so far for this heterosystem. The samples were annealed at temperatures between 750 and 950C for 1,000s and subsequently characterized by x-ray rocking analysis, secondary ion mass spectroscopy, and temperature dependent Hall measurements. A moderate decrease in room temperature Hall mobility is observed up to annealing temperatures of 900C. Above 900C the samples become homogeneously doped and show strong Si/Ge interdiffusion at the heteroboundaries. The annealing effects are discussed in terms of dopant and Ge diffusion, and of metastability of the SiGe layers.
- OSTI ID:
- 7047926
- Report Number(s):
- CONF-901035--
- Conference Information:
- Journal Name: Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena; (United States) Journal Volume: 9:4
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
36 MATERIALS SCIENCE
360601* -- Other Materials-- Preparation & Manufacture
360606 -- Other Materials-- Physical Properties-- (1992-)
ANNEALING
DOPED MATERIALS
ELECTRON MOBILITY
ELEMENTS
GERMANIDES
GERMANIUM COMPOUNDS
HEAT TREATMENTS
MASS SPECTROSCOPY
MATERIALS
MOBILITY
PARTICLE MOBILITY
SEMIMETALS
SILICON
SILICON COMPOUNDS
SPECTROSCOPY
TEMPERATURE DEPENDENCE
TEMPERATURE RANGE
TEMPERATURE RANGE 1000-4000 K
360601* -- Other Materials-- Preparation & Manufacture
360606 -- Other Materials-- Physical Properties-- (1992-)
ANNEALING
DOPED MATERIALS
ELECTRON MOBILITY
ELEMENTS
GERMANIDES
GERMANIUM COMPOUNDS
HEAT TREATMENTS
MASS SPECTROSCOPY
MATERIALS
MOBILITY
PARTICLE MOBILITY
SEMIMETALS
SILICON
SILICON COMPOUNDS
SPECTROSCOPY
TEMPERATURE DEPENDENCE
TEMPERATURE RANGE
TEMPERATURE RANGE 1000-4000 K