Electronic Transport Properties of Epitaxial Si/SiGe Heterostructures Grown on Single-Crystal SiGe Nanomembranes

Li, Yize Stephanie; Sookchoo, Pornsatit; Cui, Xiaorui; Mohr, Robert T.; Savage, Donald E.; Foote, Ryan H.; Jacobson, R. B.; Sánchez-Pérez, José R.; Paskiewicz, Deborah M.; Wu, Xian; Ward, Dan R.; Coppersmith, Susan N.; Eriksson, Mark A.; Lagally, Max G.

doi:10.1021/nn506475z

Electronic Transport Properties of Epitaxial Si/SiGe Heterostructures Grown on Single-Crystal SiGe Nanomembranes

Journal Article · Fri May 01 00:00:00 EDT 2015 · ACS Nano

DOI:https://doi.org/10.1021/nn506475z· OSTI ID:1783687

Li, Yize Stephanie ^[1]; Sookchoo, Pornsatit ^[2]; Cui, Xiaorui ^[2]; Mohr, Robert T. ^[3]; Savage, Donald E. ^[2]; Foote, Ryan H. ^[2]; Jacobson, R. B. ^[2]; Sánchez-Pérez, José R. ^[2]; Paskiewicz, Deborah M. ^[4]; Wu, Xian ^[2]; Ward, Dan R. ^[5]; Coppersmith, Susan N. ^[2]; Eriksson, Mark A. ^[2]; Lagally, Max G. ^[2]

Univ. of Wisconsin, Madison, WI (United States); University of Wisconsin-Madison Department of Materials Science and Engineering
Univ. of Wisconsin, Madison, WI (United States)
Univ. of Wisconsin, Madison, WI (United States); Western Digital, Irvine, CA (United States)
Univ. of Wisconsin, Madison, WI (United States); Argonne National Lab. (ANL), Argonne, IL (United States)
Univ. of Wisconsin, Madison, WI (United States); Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

Here, in order to assess possible improvements in the electronic performance of two-dimensional electron gases (2DEGs) in silicon, SiGe/Si/SiGe heterostructures are grown on fully elastically relaxed single-crystal SiGe nanomembranes produced through a strain engineering approach. This procedure eliminates the formation of dislocations in the heterostructure. Top-gated Hall bar devices are fabricated to enable magnetoresistivity and Hall effect measurements. Both Shubnikov-de Haas oscillations and the quantum Hall effect are observed at low temperatures, demonstrating the formation of high-quality 2DEGs. Values of charge carrier mobility as a function of carrier density extracted from these measurements are at least as high or higher than those obtained from companion measurements made on heterostructures grown on conventional strain graded substrates. In all samples, impurity scattering appears to limit the mobility.

View Accepted Manuscript (DOE)

Research Organization:: Univ. of Wisconsin, Madison, WI (United States)

Sponsoring Organization:: USDOE Advanced Research Projects Agency - Energy (ARPA-E); US Army Research Office (ARO); National Science Foundation (NSF)

Grant/Contract Number:: FG02-03ER46028

OSTI ID:: 1783687

Journal Information:: ACS Nano, Journal Name: ACS Nano Journal Issue: 5 Vol. 9; ISSN 1936-0851

Publisher:: American Chemical Society (ACS)Copyright Statement

Country of Publication:: United States

Language:: English

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36 MATERIALS SCIENCE
Shubnikov-de Haas oscillations
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Electronic Transport Properties of Epitaxial Si/SiGe Heterostructures Grown on Single-Crystal SiGe Nanomembranes

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