Storing quantum information for 30 seconds in a nanoelectronic device
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October 2014 |
Defect-Free Single-Crystal SiGe: A New Material from Nanomembrane Strain Engineering
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July 2011 |
Very Low Electron Density in Undoped Enhancement-Mode Si/SiGe Two-Dimensional Electron Gases with Thin SiGe Cap Layers
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May 2013 |
An addressable quantum dot qubit with fault-tolerant control-fidelity
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October 2014 |
Semiconductors turn soft: inorganic nanomembranes
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January 2010 |
Quantum control and process tomography of a semiconductor quantum dot hybrid qubit
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July 2014 |
Magnetic field dependence of valley splitting in realistic Si∕SiGe quantum wells
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November 2006 |
The quantized Hall effect
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July 1986 |
Scattering from strain variations in high‐mobility Si/SiGe heterostructures
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November 1995 |
Nanoscale Distortions of Si Quantum Wells in Si/SiGe Quantum-Electronic Heterostructures
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July 2012 |
Conductivity of a two-dimensional electron gas in a Si/SiGe heterostructure near the metal-insulator transition: Role of the short- and long-range scattering potential
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August 2003 |
Nanomembrane-based materials for Group IV semiconductor quantum electronics
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February 2014 |
Signature of Cooper pairs in the non-superconducting phases of amorphous superconducting tantalum films
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December 2014 |
Lattice Parameter and Density in Germanium-Silicon Alloys 1
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October 1964 |
Synthesis, assembly and applications of semiconductor nanomembranes
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September 2011 |
Phonon strain shift coefficients in Si1−xGex alloys
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May 2008 |
Elastically strain-sharing nanomembranes: flexible and transferable strained silicon and silicon–germanium alloys
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February 2007 |
Scattering mechanism in modulation-doped shallow two-dimensional electron gases
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April 2010 |
High-mobility Si and Ge structures
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December 1997 |
Test of Vegard's law in thin epitaxial SiGe layers
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December 1995 |
Si/Ge Junctions Formed by Nanomembrane Bonding
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February 2011 |
Electron spin coherence exceeding seconds in high-purity silicon
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December 2011 |
Die Konstitution der Mischkristalle und die Raumf�llung der Atome
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January 1921 |
Transport phase diagram for superconducting thin films of tantalum with homogeneous disorder
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January 2010 |
Strain relaxation and dislocations in SiGe/Si structures
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November 1996 |
Coherent singlet-triplet oscillations in a silicon-based double quantum dot
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January 2012 |
Micro-Raman spectroscopy to study local mechanical stress in silicon integrated circuits
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February 1996 |
Extremely high electron mobility in isotopically-enriched 28 Si two-dimensional electron gases grown by chemical vapor deposition
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October 2013 |
Quantum of optical absorption in two-dimensional semiconductors
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July 2013 |
Mobility enhancement of strained Si by optimized SiGe/Si/SiGe structures
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July 2012 |
Electronic properties of two-dimensional systems
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April 1982 |
Quantum Information Storage for over 180 s Using Donor Spins in a 28Si "Semiconductor Vacuum"
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June 2012 |
Extremely high electron mobility in Si/SiGe modulation‐doped heterostructures
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February 1995 |
Controllable valley splitting in silicon quantum devices
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December 2006 |
Comparison of mobility-limiting mechanisms in high-mobility Si1−xGex heterostructures
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July 1993 |
Elastically relaxed free-standing strained-silicon nanomembranes
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April 2006 |
Metal-non-metal transition in heterostructures with thick spacer layers
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April 1989 |
Raman investigation of strain in Si∕SiGe heterostructures: Precise determination of the strain-shift coefficient of Si bands
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March 2006 |
Silicon quantum electronics
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July 2013 |
Identification of a Mobility-Limiting Scattering Mechanism in Modulation-Doped Si/SiGe Heterostructures
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December 1994 |
Termination of Two-Dimensional Metallic Conduction near the Metal-Insulator Transition in a Quantum Well
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September 2011 |
Electrical control of a long-lived spin qubit in a Si/SiGe quantum dot
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August 2014 |
Observation of local tilted regions in strain-relaxed SiGe/Si buffer layers using x-ray microdiffraction
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February 1999 |
Quantized Hall effects in high-electron-mobility Si/Ge structures
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September 1992 |