Nanomembrane-based materials for Group IV semiconductor quantum electronics

Paskiewicz, D. M.; Savage, D. E.; Holt, M. V.; Evans, P. G.; Lagally, M. G.

doi:10.1038/srep04218

Nanomembrane-based materials for Group IV semiconductor quantum electronics

Journal Article · Thu Feb 27 00:00:00 EST 2014 · Scientific Reports

DOI:https://doi.org/10.1038/srep04218· OSTI ID:1624694

Paskiewicz, D. M. ^[1]; Savage, D. E. ^[2]; Holt, M. V. ^[3]; Evans, P. G. ^[2]; Lagally, M. G. ^[2]

Univ. of Wisconsin, Madison, WI (United States). Dept. of Materials Science and Engineering; DOE/OSTI
Univ. of Wisconsin, Madison, WI (United States). Dept. of Materials Science and Engineering
Argonne National Lab. (ANL), Argonne, IL (United States). Center for Nanoscale Materials

Strained-silicon/relaxed-silicon-germanium alloy (strained-Si/SiGe) heterostructures are the foundation of Group IV-element quantum electronics and quantum computation, but current materials quality limits the reliability and thus the achievable performance of devices. In comparison to conventional approaches, single-crystal SiGe nanomembranes are a promising alternative as substrates for the epitaxial growth of these heterostructures. Because the nanomembrane is truly a single crystal, in contrast to the conventional SiGe substrate made by compositionally grading SiGe grown on bulk Si, significant improvements in quantum electronic-device reliability may be expected with nanomembrane substrates. We compare lateral strain inhomogeneities and the local mosaic structure (crystalline tilt) in strained-Si/SiGe heterostructures that we grow on SiGe nanomembranes and on compositionally graded SiGe substrates, with micro-Raman mapping and nanodiffraction, respectively. Significant structural improvements are found using SiGe nanomembranes.

View Accepted Manuscript (DOE)

Research Organization:: Argonne National Lab. (ANL), Argonne, IL (United States); Univ. of Wisconsin, Madison, WI (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES). Materials Sciences & Engineering Division

Grant/Contract Number:: AC02-06CH11357; FG02-03ER46028

OSTI ID:: 1624694

Journal Information:: Scientific Reports, Journal Name: Scientific Reports Journal Issue: 1 Vol. 4; ISSN 2045-2322

Publisher:: Nature Publishing GroupCopyright Statement

Country of Publication:: United States

Language:: English

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Stressor-layer-induced elastic strain sharing in SrTiO ₃ complex oxide sheets Tilka, J. A.; Park, J.; Ahn, Y. Applied Physics Letters, Vol. 112, Issue 9 https://doi.org/10.1063/1.5019920	journal	February 2018
Stressor-Layer-Induced Elastic Strain Sharing in SrTiO3 Complex Oxide Sheets Tilka, J. A.; Park, J.; Ahn, Y. arXiv https://doi.org/10.48550/arxiv.2002.11287	text	January 2020

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