Nanomembrane-based materials for Group IV semiconductor quantum electronics

Paskiewicz, D. M.; Savage, D. E.; Holt, M. V.; Evans, P. G.; Lagally, M. G.

doi:10.1038/srep04218

Title: Nanomembrane-based materials for Group IV semiconductor quantum electronics

Journal Article · Thu Feb 27 00:00:00 EST 2014 · Scientific Reports

DOI:https://doi.org/10.1038/srep04218· OSTI ID:1624694

Paskiewicz, D. M. ^[1]; Savage, D. E. ^[1]; Holt, M. V. ^[2]; Evans, P. G. ^[1]; Lagally, M. G. ^[1]

Univ. of Wisconsin, Madison, WI (United States). Dept. of Materials Science and Engineering
Argonne National Lab. (ANL), Argonne, IL (United States). Center for Nanoscale Materials

Strained-silicon/relaxed-silicon-germanium alloy (strained-Si/SiGe) heterostructures are the foundation of Group IV-element quantum electronics and quantum computation, but current materials quality limits the reliability and thus the achievable performance of devices. In comparison to conventional approaches, single-crystal SiGe nanomembranes are a promising alternative as substrates for the epitaxial growth of these heterostructures. Because the nanomembrane is truly a single crystal, in contrast to the conventional SiGe substrate made by compositionally grading SiGe grown on bulk Si, significant improvements in quantum electronic-device reliability may be expected with nanomembrane substrates. We compare lateral strain inhomogeneities and the local mosaic structure (crystalline tilt) in strained-Si/SiGe heterostructures that we grow on SiGe nanomembranes and on compositionally graded SiGe substrates, with micro-Raman mapping and nanodiffraction, respectively. Significant structural improvements are found using SiGe nanomembranes.

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Research Organization:: Argonne National Laboratory (ANL), Argonne, IL (United States); Univ. of Wisconsin, Madison, WI (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES). Materials Sciences & Engineering Division

Grant/Contract Number:: AC02-06CH11357; FG02-03ER46028

OSTI ID:: 1624694

Journal Information:: Scientific Reports, Vol. 4, Issue 1; ISSN 2045-2322

Publisher:: Nature Publishing GroupCopyright Statement

Country of Publication:: United States

Language:: English

References (25)

Physics of strain effects in semiconductors and metal-oxide-semiconductor field-effect transistors Sun, Y.; Thompson, S. E.; Nishida, T. Journal of Applied Physics, Vol. 101, Issue 10 https://doi.org/10.1063/1.2730561	journal	May 2007
Strain: A Solution for Higher Carrier Mobility in Nanoscale MOSFETs Chu, Min; Sun, Yongke; Aghoram, Umamaheswari Annual Review of Materials Research, Vol. 39, Issue 1 https://doi.org/10.1146/annurev-matsci-082908-145312	journal	August 2009
Fast flexible electronics with strained silicon nanomembranes Zhou, Han; Seo, Jung-Hun; Paskiewicz, Deborah M. Scientific Reports, Vol. 3, Article No. 1291 https://doi.org/10.1038/srep01291	journal	February 2013
Practical design and simulation of silicon-based quantum-dot qubits Friesen, Mark; Rugheimer, Paul; Savage, Donald E. Physical Review B, Vol. 67, Issue 12 https://doi.org/10.1103/PhysRevB.67.121301	journal	March 2003
Direct-bandgap light-emitting germanium in tensilely strained nanomembranes Sanchez-Perez, J. R.; Boztug, C.; Chen, F. Proceedings of the National Academy of Sciences, Vol. 108, Issue 47, p. 18893-18898 https://doi.org/10.1073/pnas.1107968108	journal	November 2011
Strain Tuning of Ferroelectric Thin Films Schlom, Darrell G.; Chen, Long-Qing; Eom, Chang-Beom Annual Review of Materials Research, Vol. 37, Issue 1 https://doi.org/10.1146/annurev.matsci.37.061206.113016	journal	August 2007
Room-temperature ferroelectricity in strained SrTiO₃ Haeni, J. H.; Irvin, P.; Chang, W. Nature, Vol. 430, Issue 7001, p. 758-761 https://doi.org/10.1038/nature02773	journal	August 2004
Controllable valley splitting in silicon quantum devices Goswami, Srijit; Slinker, K. A.; Friesen, Mark Nature Physics, Vol. 3, Issue 1 https://doi.org/10.1038/nphys475	journal	December 2006
A silicon-based nuclear spin quantum computer Kane, B. E. Nature, Vol. 393, Issue 6681 https://doi.org/10.1038/30156	journal	May 1998
Defect-Free Single-Crystal SiGe: A New Material from Nanomembrane Strain Engineering Paskiewicz, Deborah M.; Tanto, Boy; Savage, Donald E. ACS Nano, Vol. 5, Issue 7, p. 5814-5822 https://doi.org/10.1021/nn201547k	journal	July 2011
Strain relaxation and dislocations in SiGe/Si structures Mooney, P. M. Materials Science and Engineering: R: Reports, Vol. 17, Issue 3 https://doi.org/10.1016/S0927-796X(96)00192-1	journal	November 1996
In-plane strain fluctuation in strained-Si/SiGe heterostructures Sawano, K.; Koh, S.; Shiraki, Y. Applied Physics Letters, Vol. 83, Issue 21 https://doi.org/10.1063/1.1629142	journal	November 2003
Strain in epitaxial Si/SiGe graded buffer structures grown on Si(100), Si(110), and Si(111) optically evaluated by polarized Raman spectroscopy and imaging Mermoux, M.; Crisci, A.; Baillet, F. Journal of Applied Physics, Vol. 107, Issue 1 https://doi.org/10.1063/1.3272824	journal	January 2010
Observation of local tilted regions in strain-relaxed SiGe/Si buffer layers using x-ray microdiffraction Mooney, P. M.; Jordan-Sweet, J. L.; Noyan, I. C. Applied Physics Letters, Vol. 74, Issue 5 https://doi.org/10.1063/1.123104	journal	February 1999
Nanoscale Distortions of Si Quantum Wells in Si/SiGe Quantum-Electronic Heterostructures Evans, P. G.; Savage, D. E.; Prance, J. R. Advanced Materials, Vol. 24, Issue 38 https://doi.org/10.1002/adma.201201833	journal	July 2012
Elastically strain-sharing nanomembranes: flexible and transferable strained silicon and silicon–germanium alloys Scott, Shelley A.; Lagally, Max G. Journal of Physics D: Applied Physics, Vol. 40, Issue 4 https://doi.org/10.1088/0022-3727/40/4/R01	journal	February 2007
Synthesis, assembly and applications of semiconductor nanomembranes Rogers, J. A.; Lagally, M. G.; Nuzzo, R. G. Nature, Vol. 477, Issue 7362, p. 45-53 https://doi.org/10.1038/nature10381	journal	September 2011
Phonon strain shift coefficients in Si1−xGex alloys Pezzoli, F.; Bonera, E.; Grilli, E. Journal of Applied Physics, Vol. 103, Issue 9 https://doi.org/10.1063/1.2913052	journal	May 2008
Raman investigation of strain in Si∕SiGe heterostructures: Precise determination of the strain-shift coefficient of Si bands Nakashima, S.; Mitani, T.; Ninomiya, M. Journal of Applied Physics, Vol. 99, Issue 5 https://doi.org/10.1063/1.2178396	journal	March 2006
Thin Film Materials Freund, L. B.; Suresh, S. https://doi.org/10.1017/CBO9780511754715	book	July 2010
Si/Ge Junctions Formed by Nanomembrane Bonding Kiefer, Arnold M.; Paskiewicz, Deborah M.; Clausen, Anna M. ACS Nano, Vol. 5, Issue 2, p. 1179-1189 https://doi.org/10.1021/nn103149c	journal	February 2011
Micro-Raman spectroscopy to study local mechanical stress in silicon integrated circuits Wolf, Ingrid De Semiconductor Science and Technology, Vol. 11, Issue 2 https://doi.org/10.1088/0268-1242/11/2/001	journal	February 1996
Raman spectroscopy of Si1−xGex epilayers Pezzoli, F.; Martinelli, Lucio; Grilli, E. Materials Science and Engineering: B, Vol. 124-125 https://doi.org/10.1016/j.mseb.2005.08.057	journal	December 2005
Nanoscale Hard X-Ray Microscopy Methods for Materials Studies Holt, Martin; Harder, Ross; Winarski, Robert Annual Review of Materials Research, Vol. 43, Issue 1 https://doi.org/10.1146/annurev-matsci-071312-121654	journal	July 2013
Silicon Nanomembranes Lagally, Max G. MRS Bulletin, Vol. 32, Issue 1 https://doi.org/10.1557/mrs2007.15	journal	January 2007

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Stressor-layer-induced elastic strain sharing in SrTiO ₃ complex oxide sheets Tilka, J. A.; Park, J.; Ahn, Y. Applied Physics Letters, Vol. 112, Issue 9 https://doi.org/10.1063/1.5019920	journal	February 2018
Stressor-Layer-Induced Elastic Strain Sharing in SrTiO3 Complex Oxide Sheets Tilka, J. A.; Park, J.; Ahn, Y. arXiv https://doi.org/10.48550/arxiv.2002.11287	text	January 2020

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