Atomic-layer doping of SiGe heterostructures for atomic-precision donor devices

Bussmann, E.; Gamble, John King; Koepke, J. C.; Laroche, D.; Huang, S. H.; Chuang, Y.; Li, J. -Y.; Liu, C. W.; Swartzentruber, B. S.; Lilly, M. P.; Carroll, M. S.; Lu, T. -M.

doi:10.1103/PhysRevMaterials.2.066004

Atomic-layer doping of SiGe heterostructures for atomic-precision donor devices

Journal Article · Thu Jun 21 00:00:00 EDT 2018 · Physical Review Materials

DOI:https://doi.org/10.1103/PhysRevMaterials.2.066004· OSTI ID:1464188

Bussmann, E. ^[1]; Gamble, John King ^[2]; Koepke, J. C. ^[3]; Laroche, D. ^[3]; Huang, S. H. ^[4]; Chuang, Y. ^[4]; Li, J. -Y. ^[4]; Liu, C. W. ^[4]; Swartzentruber, B. S. ^[1]; Lilly, M. P. ^[1]; Carroll, M. S. ^[3]; Lu, T. -M. ^[3]

Sandia National Lab. (SNL-NM), Albuquerque, NM (United States). Center for Integrated Nanotechnologies
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States). Center for Computing Research
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
National Taiwan Univ., Taipei (Taiwan). Dept. of Electrical Engineering and Graduate Inst. of Electronic Engineering; National Nano Device Laboratories, Hsinchu (Taiwan)

As a first step to porting scanning tunneling microscopy methods of atomic-precision fabrication to a strained-Si/SiGe platform, we demonstrate post-growth P atomic-layer doping of SiGe heterostructures. To preserve the substrate structure and elastic state, we use a T ≤ 800 °C process to prepare clean Si_0.86 Ge_0.14 surfaces suitable for atomic-precision fabrication. P-saturated atomic-layer doping is incorporated and capped with epitaxial Si under a thermal budget compatible with atomic-precision fabrication. Hall measurements at T = 0.3 K show that the doped heterostructure has R_$$\square$$ = 570 ± 30 Ω , yielding an electron density n_e = 2.1 ± 0.1 × 10¹⁴ cm^-2 and mobility μ_e = 52 ± 3 cm² V^-1 s^-1, similar to saturated atomic-layer doping in pure Si and Ge. The magnitude of μ e and the complete absence of Shubnikov–de Haas oscillations in magnetotransport measurements indicate that electrons are overwhelmingly localized in the donor layer, and not within a nearby buried Si well. Finally, this conclusion is supported by self-consistent Schrödinger-Poisson calculations that predict electron occupation primarily in the donor layer.

View Accepted Manuscript (DOE)

Research Organization:: Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)

Sponsoring Organization:: USDOE; USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)

Grant/Contract Number:: AC04-94AL85000; NA0003525

OSTI ID:: 1464188

Alternate ID(s):: OSTI ID: 1456270

Report Number(s):: SAND--2017-11274J; 663113

Journal Information:: Physical Review Materials, Journal Name: Physical Review Materials Journal Issue: 6 Vol. 2; ISSN PRMHAR; ISSN 2475-9953

Publisher:: American Physical Society (APS)Copyright Statement

Country of Publication:: United States

Language:: English

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