Growth rate and composition calibration of III/V materials on GaAs and InP using reflection high-energy electron diffraction oscillations

Journal Article · · Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena; (United States)

DOI:https://doi.org/10.1116/1.585380· OSTI ID:7047888

Kopf, R F; Kuo, J M ^[1]; Ohring, M ^[2]

---

1. AT and T Bell Labs., Murray Hill, NJ (United States)
2. Stevens Inst. of Tech., Hoboken, NJ (United States)

This paper describes the use of reflection high-energy electron diffraction (RHEED) intensity oscillations to calibrate the growth of four material systems: (1) GaAs, Al{sub x}Ga{sub 1-x}As, and strained In{sub y}Ga{sub 1-y}As on GaAs substrates. (2) Lattice-matched In{sub 0.53}Ga{sub 0.47}As and In{sub 0.52}Al{sub 0.48}As on InP substrates. (3) Lattice matched quaternary In{sub 1-x-y}Ga{sub x}Al{sub y}As on InP substrates. (4) Strained In{sub y}Ga{sub 1-y}As and In{sub x}Al{sub 1-x}As on InP substrates.

• OSTI ID: 7047888
• Journal Information: Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena; (United States), Journal Name: Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena; (United States) Vol. 9:4; ISSN 0734-211X; ISSN JVTBD
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360602* -- Other Materials-- Structure & Phase Studies
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
CALIBRATION
COHERENT SCATTERING
CRYSTAL GROWTH
CRYSTAL LATTICES
CRYSTAL STRUCTURE
DIFFRACTION
ELECTRON DIFFRACTION
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
INDIUM ARSENIDES
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
REFLECTION
SCATTERING
SUBSTRATES