Shortfall of defect models for amorphous silicon solar cell performance

Journal Article · Mon Mar 22 00:00:00 EST 1993 · Applied Physics Letters; (United States)

DOI:https://doi.org/10.1063/1.108681· OSTI ID:7046947

von Roedern, B ^[1]

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1. National Renewable Energy Laboratory, Golden, Colorado 80401-3393 (United States)

It is suggested that the prevailing models for the Staebler--Wronski effect are incorrect because they ignore the effects of charged dangling bonds. The degradation behavior of material parameters such as photoconductivity or midgap defect densities does not allow us to predict either the magnitude or the kinetic behavior of solar cell degradation.

• DOE Contract Number: AC02-83CH10093
• OSTI ID: 7046947
• Journal Information: Applied Physics Letters; (United States), Vol. 62:12; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
SILICON SOLAR CELLS
PHYSICAL RADIATION EFFECTS
AMBIPOLAR DIFFUSION
AMORPHOUS STATE
DAMAGE
DEFECTS
HYDROGEN ADDITIONS
PERFORMANCE
PHOTOCONDUCTIVITY
SILICON
SPIN
ANGULAR MOMENTUM
DIFFUSION
DIRECT ENERGY CONVERTERS
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
ELEMENTS
EQUIPMENT
PARTICLE PROPERTIES
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
PHYSICAL PROPERTIES
RADIATION EFFECTS
SEMIMETALS
SOLAR CELLS
SOLAR EQUIPMENT
140501* - Solar Energy Conversion- Photovoltaic Conversion