Photocharge transport and recombination measurements in amorphous silicon films and solar cells by photoconductive frequency mixing. Annual subcontract report, May 13, 1994--May 12, 1995
- Univ. of California, Los Angeles, CA (United States)
The continuous decay of electron drift mobility in intrinsic a-Si:H and a-SiC:H upon light soaking was investigated by the photomixing technique. The photoconductivity, lifetime and drift mobility in intrinsic hydrogenated amorphous silicon (a-Si:H) and hydrogenated amorphous silicon carbide (a-SiC:H) while light-soaking were determined using a photomixing technique. In addition to the decay of the photoconductivity and electron lifetime, continuous decay of the electron drift mobility was found during the light soaking process, which reveals a new phenomenon associated with the Staebler-Wronski effect. The drift mobility decreased by a factor of 2 for 20 hour light soaking at 2.5 sun intensity. Experimental data were fitted to a stretched exponential law. Different stretched-exponential parameters for photoconductivity, lifetime and drift mobility were obtained, which indicates the production of defects with different generation kinetics upon light soaking.
- Research Organization:
- National Renewable Energy Lab., Golden, CO (United States)
- Sponsoring Organization:
- USDOE, Washington, DC (United States)
- DOE Contract Number:
- AC36-83CH10093
- OSTI ID:
- 135153
- Report Number(s):
- NREL/TP--451-20019; ON: DE95013131
- Country of Publication:
- United States
- Language:
- English
Similar Records
Photocharge transport and recombination measurements in amorphous silicon films and solar cells by photoconductive frequency mixing. Annual subcontract report, 15 May 1995--15 May 1996
Photocharge Transport and Recombination Measurements in Amorphous Silicon Films and Solar Cells by Photoconductive Frequency Mixing: Final Subcontract Report: 13 May 1994 - 15 January 1998
Persistent photoconductance in doping-modulated and compensated a -Si:H
Technical Report
·
Tue Oct 01 00:00:00 EDT 1996
·
OSTI ID:383566
Photocharge Transport and Recombination Measurements in Amorphous Silicon Films and Solar Cells by Photoconductive Frequency Mixing: Final Subcontract Report: 13 May 1994 - 15 January 1998
Technical Report
·
Tue May 04 00:00:00 EDT 1999
·
OSTI ID:6734
Persistent photoconductance in doping-modulated and compensated a -Si:H
Journal Article
·
Sun Sep 15 00:00:00 EDT 1991
· Physical Review, B: Condensed Matter; (United States)
·
OSTI ID:5170394