Photocharge transport and recombination measurements in amorphous silicon films and solar cells by photoconductive frequency mixing. Annual subcontract report, 15 May 1995--15 May 1996
- California Univ., Los Angeles, CA (United States)
Using the photomixing technique, the authors systematically studied the transport properties of intrinsic hydrogenated amorphous silicon (a-Si:H) samples that had hydrogen content ranging from over 10% to less than 1% and which were produced by the hot-wire technique at NREL. They investigated the continuous decay of electron drift mobility in intrinsic a-Si:H on light-soaking and determined the degradation of photoconductivity, lifetime, and drift mobility in these a-Si:H samples while light-soaking. In addition to the decay of the photoconductivity and electron lifetime, continuous decay of the electron drift mobility was found during the light-soaking process, which reveals a new phenomenon associated with the Staebler-Wronski effect. The drift mobility decreased by a factor of 2--4 for 5-hour light-soaking at 4-sun intensity. The authors investigated the effects of deposition conditions on transport properties of intrinsic a-Si:H films and, by using the photomixing technique, they determined the electron drift mobility, lifetime, and the conduction-band Urbach energy of a-Si:H films as a function of substrate temperature. 44 refs.
- Research Organization:
- National Renewable Energy Lab., Golden, CO (United States); California Univ., Los Angeles, CA (United States)
- Sponsoring Organization:
- USDOE, Washington, DC (United States)
- DOE Contract Number:
- AC36-83CH10093
- OSTI ID:
- 383566
- Report Number(s):
- NREL/TP--451-21704; ON: DE96013112; CNN: Contract XAN-4-13318-10
- Country of Publication:
- United States
- Language:
- English
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