Photoluminescence linewidths in metalorganic vapor phase epitaxially grown ordered and disordered InAlGaP alloys

Journal Article · Mon Nov 30 23:00:00 EST 1992 · Journal of Applied Physics; (United States)

DOI:https://doi.org/10.1063/1.352354· OSTI ID:7038287

Schneider, Jr, R P; Jones, E D; Lott, J A; Bryan, R P ^[1]

---

1. Sandia National Laboratories, Albuquerque, New Mexico 87185-5800 (United States)

The dependence of the photoluminescent properties of In{sub 0.48}(Al{sub {ital y}}Ga{sub 1{minus}{ital y}}){sub 0.52}P alloys (0{le}{ital y}{le}0.5) on growth temperature and substrate misorientation off GaAs(100) has been studied. Samples were grown using low-pressure metalorganic vapor phase epitaxy. By studying the dependence of ordering behavior in InGaP as a function of substrate misorientation and growth temperature simultaneously, a very large range in low-temperature photoluminescence emission energy---135 meV---has been obtained. The photoluminescence linewidth exhibits a strong, continuous dependence on the extent of atomic ordering (the emission energy) in the alloys. The results indicate that inhomogeneity in the microstructure of the material (i.e., between ordered'' domains and the disordered'' matrix) is the dominant photoluminescence broadening mechanism. This investigation has allowed a significant optimization of the optical properties of these materials, including the narrowest low-temperature photoluminescent linewidths reported for all of the In(Al{sub {ital y}}Ga{sub 1{minus}{ital y}})P alloys exhibiting direct band gaps (4.2 meV for InGaP).

• DOE Contract Number: AC04-76DP00789
• OSTI ID: 7038287
• Journal Information: Journal of Applied Physics; (United States), Journal Name: Journal of Applied Physics; (United States) Vol. 72:11; ISSN 0021-8979; ISSN JAPIA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360606* -- Other Materials-- Physical Properties-- (1992-)
ALUMINIUM COMPOUNDS
ALUMINIUM PHOSPHIDES
CRYSTAL STRUCTURE
EPITAXY
GALLIUM COMPOUNDS
GALLIUM PHOSPHIDES
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
LINE WIDTHS
LUMINESCENCE
MICROSTRUCTURE
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PHOTOLUMINESCENCE
PNICTIDES
VAPOR PHASE EPITAXY