Excitonic transitions in InGaP/InAlGaP strained quantum wells
- Sandia National Laboratories, Albuquerque, New Mexico 87185-5800 (United States)
Excitonic transitions in metalorganic vapor phase epitaxially grown In[sub [ital x]]Ga[sub 1[minus][ital x]]P/In[sub 0.48](Al[sub 0.7]Ga[sub 0.3])[sub 0.52]P strained single quantum-well structures are characterized using low-temperature photoluminescence and photoluminescence excitation (PLE) spectroscopies. The structures consist of several uncoupled quantum wells with thicknesses between 1.2 and 11.3 nm, and compositions [ital x] of 0.48 (nominally lattice matched) and 0.56 ([similar to]0.6% biaxial compressive strain). The photoluminescence spectra exhibit intense peaks over the wavelength range 550--650 nm, with linewidths between 7 and 23 meV depending on the well thickness. The PLE spectra reveal strong heavy-hole and light-hole transitions, as well as higher-order ([ital n]=2) transitions in the thicker wells. The heavy-hole/light-hole splitting shows little dependence on well thickness in the strained structures, indicating a relatively large conduction band offset of [Delta][ital E][sub [ital C]][similar to]0.75[Delta][ital E][sub [ital G]].
- DOE Contract Number:
- AC04-76DP00789
- OSTI ID:
- 6048286
- Journal Information:
- Applied Physics Letters; (United States), Journal Name: Applied Physics Letters; (United States) Vol. 63:9; ISSN APPLAB; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
360606* -- Other Materials-- Physical Properties-- (1992-)
ALUMINIUM COMPOUNDS
ALUMINIUM PHOSPHIDES
CHEMICAL COMPOSITION
ELECTRONIC STRUCTURE
EPITAXY
EXCITONS
GALLIUM COMPOUNDS
GALLIUM PHOSPHIDES
HETEROJUNCTIONS
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
JUNCTIONS
LUMINESCENCE
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PHOTOLUMINESCENCE
PNICTIDES
QUASI PARTICLES
SEMICONDUCTOR JUNCTIONS
VAPOR PHASE EPITAXY