A hardened technology on SOI for analog devices

Journal Article · Mon Jun 01 04:00:00 EDT 1992 · IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States)

DOI:https://doi.org/10.1109/23.277523· OSTI ID:7037425

Dupont-Nivet, E; Delagnes, E; Leray, J L; Martin, J L; Montaron, J ^[1]

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1. CEA, CentER d'Etudes de Bruyeres-Le-Chatel, BP12, 91680 Bruyeres-Le-Chatel (FR)

This paper is dedicated to the presentation of a hardened and mixed analog-digital technology under development. This technology now includes a PJFET with a quite good hardness, CMOS transistors with a potential multi-Megarad hardness and first tests of bipolar transistors with a not yet optimized structure (structure of the JFET). All the results achieved so far, together with the optimizations under way will lead to an analog technology with a digital capability and a high level of hardness (neutron fluence, cumulated dose, immunity to upsets) to address the needs of military applications and electronics for the elementary particles physics detectors of the next generation colliders.

• OSTI ID: 7037425
• Journal Information: IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States), Journal Name: IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States) Vol. 39:3; ISSN 0018-9499; ISSN IETNA
• Country of Publication: United States
• Language: English

Related Subjects

440200* -- Radiation Effects on Instrument Components
Instruments
or Electronic Systems
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
ANALOG SYSTEMS
DOSE RATES
ELECTRICAL EQUIPMENT
ELECTRICAL INSULATORS
ELEMENTARY PARTICLES
ELEMENTS
EQUIPMENT
HARDENING
MEASURING INSTRUMENTS
NEUTRON FLUENCE
OPTIMIZATION
PHYSICAL RADIATION EFFECTS
RADIATION DETECTORS
RADIATION EFFECTS
RADIATION HARDENING
SEMIMETALS
SILICON
TECHNOLOGY ASSESSMENT