Industrial transfer and stabilization of a CMOS-JFET-bipolar radiation-hard analog-digital SOI technology

Journal Article · Sun Aug 01 00:00:00 EDT 1999 · IEEE Transactions on Nuclear Science

DOI:https://doi.org/10.1109/23.790685· OSTI ID:684539

Dentan, M; Abbon, P; Borgeaud, P ^[1]

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1. CEA-DSM-DAPNIA Saclay, Gif-sur-Yvette (France); and others

DMILL technology integrates mixed analog-digital very rad-hard (> 10 Mrad and > 10{sup 14} neutron/cm{sup 2}) vertical bipolar, 0.8 {micro}m CMOS and 1.2 {micro}m PJFET transistors on SOI substrate. In this paper, after a presentation of the DMILL program goal, the authors discuss in more detail the main technological choices, the main milestones from the R and D to the industrial implementation, and the main results obtained after stabilization of the final process-flow in the MHS foundry.

• OSTI ID: 684539
• Report Number(s): CONF-981110--
• Journal Information: IEEE Transactions on Nuclear Science, Journal Name: IEEE Transactions on Nuclear Science Journal Issue: 4Pt1 Vol. 46; ISSN IETNAE; ISSN 0018-9499
• Country of Publication: United States
• Language: English

Related Subjects

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43 PARTICLE ACCELERATORS
44 INSTRUMENTATION
INCLUDING NUCLEAR AND PARTICLE DETECTORS
ANALOG SYSTEMS
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RADIATION DETECTORS
TECHNOLOGY TRANSFER
TRANSISTORS