Radiation effects on SOI analog devices parameters

Conference · Wed Jun 01 00:00:00 EDT 1994 · IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States)

OSTI ID:6598067

Flament, O; Leray, J L; Martin, J L ^[1]

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1. CEA Centre d'etude de Bruyeres, Bruyeres-Le-Chatel (France); and others

Investigations of test circuit parameters in a mixed analog-digital technology (including CMOS, PJFET and NPN) are presented. The changes in electrical parameters as a function of the level of radiation up to 10 Mrad(SiO[sub 2]) and 3.8 10[sup 14] neutrons/cm[sup 2] are reported. Analysis pertains to hardness limiting mechanisms identification.

• OSTI ID: 6598067
• Report Number(s): CONF-930953--
• Journal Information: IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States), Journal Name: IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States) Vol. 41:3Pt1; ISSN 0018-9499; ISSN IETNAE
• Country of Publication: United States
• Language: English

Related Subjects

440200* -- Radiation Effects on Instrument Components
Instruments
or Electronic Systems
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
ANALOG SYSTEMS
CURRENTS
DATA
ELECTRIC CURRENTS
ELECTRICAL PROPERTIES
EXPERIMENTAL DATA
HARDENING
INFORMATION
IRRADIATION
LEAKAGE CURRENT
NUMERICAL DATA
PHYSICAL PROPERTIES
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
RADIATION HARDENING