Surface roughening of Ge(001) during 200 eV Xe ion bombardment and Ge molecular beam epitaxy
Journal Article
·
· Journal of Vacuum Science and Technology, A (Vacuum, Surfaces and Films); (USA)
- Sandia National Laboratories, Albuquerque, NM (USA)
The kinetics of surface roughening of Ge(001) during 200 eV Xe ion bombardment and during Ge molecular beam epitaxy (MBE) are studied by real-time reflection high-energy electron diffraction. In both cases, initially smooth surfaces reach a steady state roughness which depends on temperature and incident ion or adatom flux. The data are analyzed in terms of a phenomenological model in which beam-induced roughening competes with beam-induced smoothening, and in which the defect creation rate and surface diffusivity are fitting parameters. For comparable fluxes, the temperature dependences for the net roughening induced by ions and adatoms are strikingly similar, implying a similarity in the surface diffusivities of vacancies and adatoms. For the case of ion-induced roughening, approximately one surface defect (in units of displaced surface atoms) is created per ion which is consistent with calculations assuming that a large fraction of atomic displacements recombine without producing surface defects at these ion energies.
- DOE Contract Number:
- AC04-76DP00789
- OSTI ID:
- 7037060
- Journal Information:
- Journal of Vacuum Science and Technology, A (Vacuum, Surfaces and Films); (USA), Journal Name: Journal of Vacuum Science and Technology, A (Vacuum, Surfaces and Films); (USA) Journal Issue: 3 Vol. 8:3; ISSN 0734-2101; ISSN JVTAD
- Country of Publication:
- United States
- Language:
- English
Similar Records
Surface roughening of Ge(001) during 200 eV Xe ion bombardment and Ge molecular beam epitaxy
Molecular-beam epitaxial growth surface roughening kinetics of Ge(001): A theoretical study
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Conference
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Sat Dec 31 23:00:00 EST 1988
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OSTI ID:5684717
Molecular-beam epitaxial growth surface roughening kinetics of Ge(001): A theoretical study
Journal Article
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Sun Feb 28 23:00:00 EST 1993
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·
OSTI ID:249826
Argon ion bombardment during molecular beam epitaxy of Ge(001)
Conference
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Thu Dec 31 23:00:00 EST 1987
·
OSTI ID:6567295
Related Subjects
656003* -- Condensed Matter Physics-- Interactions between Beams & Condensed Matter-- (1987-)
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ATOMIC IONS
BEAMS
CHARGED PARTICLES
DEFECTS
ELEMENTS
GERMANIUM
ION BEAMS
IONS
METALS
ROUGHNESS
SURFACE PROPERTIES
TEMPERATURE DEPENDENCE
XENON IONS
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ATOMIC IONS
BEAMS
CHARGED PARTICLES
DEFECTS
ELEMENTS
GERMANIUM
ION BEAMS
IONS
METALS
ROUGHNESS
SURFACE PROPERTIES
TEMPERATURE DEPENDENCE
XENON IONS