Argon ion bombardment during molecular beam epitaxy of Ge(001)

Conference · Fri Jan 01 04:00:00 EST 1988

OSTI ID:6567295

Chason, E; Horn, K M; Tsao, J Y; Picraux, S T

Using in situ, real-time reflection high energy electron diffraction (RHEED), we have measured the evolution of Ge (001) surface morphology during simultaneous molecular beam epitaxy and Ar ion beam bombardment. Surprisingly, low-energy Ar ions during growth tend to smoothen the surface. Bombardment by the ion beam without growth roughens the surface, but the surfaces can be reversibly smoothened by restoring the growth beam. We have measured the effect of such ''ion beam growth smoothening'' above and below the critical temperature for intrinsic growth roughening. At all measured growth temperatures the surface initially smoothens but below the critical roughening temperature the final surface morphology is rough whereas above this temperature the final morphology is smooth. 9 refs., 3 figs.

• Research Organization: Sandia National Labs., Albuquerque, NM (USA)
• DOE Contract Number: AC04-76DP00789
• OSTI ID: 6567295
• Report Number(s): SAND-88-1644C; CONF-881155-16; ON: DE89004378
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360101* -- Metals & Alloys-- Preparation & Fabrication
656003 -- Condensed Matter Physics-- Interactions between Beams & Condensed Matter-- (1987-)
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ARGON IONS
CHARGED PARTICLES
COHERENT SCATTERING
CRYSTAL GROWTH METHODS
DIFFRACTION
ELECTRON DIFFRACTION
ELEMENTS
EPITAXY
GERMANIUM
ION IMPLANTATION
IONS
METALS
MOLECULAR BEAM EPITAXY
ROUGHNESS
SCATTERING
SURFACE PROPERTIES