Surface roughening of Ge(001) during 200 eV Xe ion bombardment and Ge molecular beam epitaxy

Conference · Sun Jan 01 04:00:00 EST 1989

DOI:https://doi.org/10.1116/1.576724· OSTI ID:5684717

Chason, E.; Tsao, J. Y.; Horn, K. M.; Picraux, S. T.; Atwater, H. A. ^[1]

---

1. Sandia National Labs., Albuquerque, NM (USA)

The kinetics of surface roughening of Ge (001) during 200 eV Xe ion bombardment and during Ge molecular beam epitaxy are studied by real- time reflection high-energy electron diffraction. In both cases, initially smooth surfaces reach a steady state roughness which depends on temperature and incident ion or adatom flux. The data are analyzed in terms of a model in which defect-induced roughening competes with defect-induced smoothening, and in which the defect creation rate and surface diffusivity are fitting parameters. For comparable fluxes, the temperature dependences for the net roughening induced by ions and adatoms are strikingly similar, implying a similarity in the surface diffusivities of vacancies and adatoms. For the case of ion-induced roughening, a defect creation rate of 3 per ion is obtained which is consistent with calculations and which indicates that the majority of atomic displacements produce surface defects at these ion energies. 11 refs., 3 figs.

• Research Organization: Sandia National Labs., Albuquerque, NM (USA)
• Sponsoring Organization: DOE/DP
• DOE Contract Number: AC04-76DP00789
• OSTI ID: 5684717
• Report Number(s): SAND-89-1322C; CONF-891093--6; ON: DE90000674
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360102* -- Metals & Alloys-- Structure & Phase Studies
656003 -- Condensed Matter Physics-- Interactions between Beams & Condensed Matter-- (1987-)
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
BEAMS
CHARGED PARTICLES
COHERENT SCATTERING
DEFECTS
DIFFRACTION
ELECTRON DIFFRACTION
ELEMENTS
EPITAXY
GERMANIUM
ION BEAMS
IONS
METALS
MOLECULAR BEAM EPITAXY
ROUGHNESS
SCATTERING
SURFACE PROPERTIES
TEMPERATURE DEPENDENCE
XENON IONS