Supercomputer simulation for understanding and designing ultra-high-speed semiconductor devices

Journal Article · Thu Dec 31 23:00:00 EST 1987 · Engineering, Cornell Quarterly; (USA)

OSTI ID:7035683

Krusius, J P; Weinzierl, S R ^[1]; Al-Omar, A A ^[2]

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1. Cornell Univ., Ithaca, NY (USA). Dept. of Electrical Engineering
2. Kuwait Univ. (Kuwait)

All of modern microelectronics rests on semiconductor devices. Two or more such devices are connected together into electronic circuits, which provide logic operations or amplification of analog signals. Large numbers of semiconductor devices are assembled on a single substrate in integrated circuits (ICs) to form the powerful semiconductor chips used in computers and in communication and control systems. While all large ICs with a high density of devices are made of silicon, small ICs with very high speed devices are made of gallium arsenide (GaAs) or similar compound semiconductors. In this article the authors discuss new concepts being used to make compound semiconductor devices even faster than they are today. The approach they are taking in our research is that of computer simulation on a supercomputer.

• OSTI ID: 7035683
• Journal Information: Engineering, Cornell Quarterly; (USA), Journal Name: Engineering, Cornell Quarterly; (USA) Vol. 23; ISSN ECQUA; ISSN 0013-7871
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360603 -- Materials-- Properties
42 ENGINEERING
426000 -- Engineering-- Components
Electron Devices & Circuits-- (1990-)
99 GENERAL AND MISCELLANEOUS
990200* -- Mathematics & Computers
ARSENIC COMPOUNDS
ARSENIDES
COMMUNICATIONS
COMPUTERIZED CONTROL SYSTEMS
COMPUTERIZED SIMULATION
COMPUTERS
CONTROL SYSTEMS
DESIGN
DIGITAL COMPUTERS
ELECTRONIC CIRCUITS
ELEMENTS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
INTEGRATED CIRCUITS
MICROELECTRONIC CIRCUITS
MICROELECTRONICS
PERFORMANCE
PNICTIDES
SEMICONDUCTOR DEVICES
SEMIMETALS
SILICON
SIMULATION
SUPERCOMPUTERS