High-speed microprocessor design with gallium arsenide very large scale integrated digital circuits
Thesis/Dissertation
·
OSTI ID:5688607
This thesis explores the feasibility of designing a computer using gallium arsenide very large scale integrated circuits (GaAs VLSI). The following aspects are considered: technology selection, on-chip interconnects, GaAs VLSI design techniques, microprocessor design, and high-speed testing. Two GaAs VLSI chips, taken from the processor design, were implemented with direct-coupled field effect transistor logic (DCFL): a three port, 1K bit register-file and an arithmetic and logic unit.
- Research Organization:
- Michigan Univ., Ann Arbor, MI (United States)
- OSTI ID:
- 5688607
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
36 MATERIALS SCIENCE
360606 -- Other Materials-- Physical Properties-- (1992-)
42 ENGINEERING
426000 -- Engineering-- Components
Electron Devices & Circuits-- (1990-)
99 GENERAL AND MISCELLANEOUS
990200* -- Mathematics & Computers
ARSENIC COMPOUNDS
ARSENIDES
COMPUTER ARCHITECTURE
COMPUTER-AIDED DESIGN
COMPUTERS
DESIGN
ELECTRICAL PROPERTIES
ELECTRONIC CIRCUITS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
INTEGRATED CIRCUITS
MICROELECTRONIC CIRCUITS
MICROPROCESSORS
PHYSICAL PROPERTIES
PNICTIDES
360606 -- Other Materials-- Physical Properties-- (1992-)
42 ENGINEERING
426000 -- Engineering-- Components
Electron Devices & Circuits-- (1990-)
99 GENERAL AND MISCELLANEOUS
990200* -- Mathematics & Computers
ARSENIC COMPOUNDS
ARSENIDES
COMPUTER ARCHITECTURE
COMPUTER-AIDED DESIGN
COMPUTERS
DESIGN
ELECTRICAL PROPERTIES
ELECTRONIC CIRCUITS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
INTEGRATED CIRCUITS
MICROELECTRONIC CIRCUITS
MICROPROCESSORS
PHYSICAL PROPERTIES
PNICTIDES