Model of bias sputtering applied to the control of Nb film properties

Journal Article · Fri Sep 01 04:00:00 EDT 1978 · J. Appl. Phys.; (United States)

DOI:https://doi.org/10.1063/1.325518· OSTI ID:7034431

Kay, E; Heim, G

Niobium films have been prepared by bias sputtering in a conventional sputter system operated in the triode configuration. Gas analysis of the discharge and of the deposited films as well as resistivity and lattice-parameter measurements provide the basis for the interpretation of the deposition process under ion bombardment. The importance of defining the relative rate of arrival of energetic ion versus neutrals in addition to defining the energy of arriving particles is emphasized. The close relationship of bias sputtering to ion implantation is stressed. A model for bias sputtering is developed which is suited for fine-tuning film composition and structure and thereby the resultant thin-film properties.

• Research Organization: IBM Research Laboratory, San Jose, California 95193
• OSTI ID: 7034431
• Journal Information: J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 49:9; ISSN JAPIA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360101* -- Metals & Alloys-- Preparation & Fabrication
BEAMS
CHARGED PARTICLES
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
ELEMENTS
FILMS
GAS ANALYSIS
ION BEAMS
IONS
KRYPTON IONS
LATTICE PARAMETERS
METALS
NIOBIUM
PHYSICAL PROPERTIES
REFRACTORY METALS
SPUTTERING
SUPERCONDUCTORS
TRANSITION ELEMENTS
TYPE-II SUPERCONDUCTORS