Modeling of substrate bias effect on the compositional variations in sputtered-deposited TiB{sub 2+x} diffusion barrier thin films
Book
·
OSTI ID:305588
- Ben-Gurion Univ. of the Negev, Beer-Sheva (Israel). Dept. of Materials Engineering
Sputter-deposited titanium boride diffusion barrier layers have been found to be boron enriched when r.f. substrate bias was applied. In the present experiments titanium boride was deposited by co-sputtering from Ti and B pure targets in Ar discharge and the voltage of r.f. self-bias was in the range of 100--250 V. Films deposited were found by Auger electron spectroscopy to be B enriched with increasing bias voltage at constant Ti and B sputtering rates. A model of the sputter-deposition conditions was developed to predict the composition and the thickness of the growing film. The model explains the experimental results indicating that B enrichment is mainly a result of differential resputtering of the components from the growing film by energetic Ar ions capture from the r.f. discharge.
- OSTI ID:
- 305588
- Report Number(s):
- CONF-980405--
- Country of Publication:
- United States
- Language:
- English
Similar Records
Effect of system parameters on substrate bias during D.C. and R.F. sputter deposition
Scanning magnetron-sputtered TiN coating as diffusion barrier for silicon devices
Planar deposition of aluminum by RF/dc sputtering with RF bias
Technical Report
·
Tue Jul 01 00:00:00 EDT 1975
·
OSTI ID:4193323
Scanning magnetron-sputtered TiN coating as diffusion barrier for silicon devices
Journal Article
·
Sun May 15 00:00:00 EDT 2005
· Journal of Applied Physics
·
OSTI ID:20709678
Planar deposition of aluminum by RF/dc sputtering with RF bias
Journal Article
·
Sat Jun 01 00:00:00 EDT 1985
· J. Electrochem. Soc.; (United States)
·
OSTI ID:5090571